Showing results 18 to 35 of 35
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Issue Date | Title | Author(s) |
2004-03-01 | Identification of bound exciton complexes in ZnO | Strassburg, M; Rodina, A; Dworzak, M; Haboeck, U; Krestnikov, IL; Hoffmann, A; Gelhausen, O; Phillips, MR; Alves, HR; Zeuner, A; Hofmann, DM; Meyer, BK |
2010-12-01 | Luminescence of InGaN MQWs grown on misorientated GaN substrates | Nenstiel, C; Switaisky, T; Alic, M; Suski, T; Albecht, M; Phillips, MR; Hoffmann, A |
2002-01 | Mining Both Positive and Negative Association Rules | Wu, X; Zhang, C; Zhang, S; Sammut, C; Hoffmann, A |
2015-07-06 | Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing | Ton-That, C; Zhu, L; Lockrey, MN; Phillips, MR; Cowie, BCC; Tadich, A; Thomsen, L; Khachadorian, S; Schlichting, S; Jankowski, N; Hoffmann, A |
2015-08-11 | Nature of red luminescence in oxygen treated hydrothermally grown zinc oxide nanorods | Anantachaisilp, S; Smith, SM; Ton-That, C; Pornsuwan, S; Moon, AR; Nenstiel, C; Hoffmann, A; Phillips, MR |
2003-12-01 | Optical properties of Mn-doped GaN | Gelhausen, O; Malguth, E; Phillips, MR; Goldys, EM; Strassburg, M; Hoffmann, A; Graf, T; Gjukic, M; Stutzmann, M |
2011-02-07 | Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements | Callsen, G; Reparaz, JS; Wagner, MR; Kirste, R; Nenstiel, C; Hoffmann, A; Phillips, MR |
2014-11-07 | Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements | Callsen, G; Wagner, MR; Reparaz, JS; Nippert, F; Kure, T; Kalinowski, S; Hoffmann, A; Ford, MJ; Phillips, MR; Dalmau, RF; Schlesser, R; Collazo, R; Sitar, Z |
2017-12-01 | Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface | Choi, S; Rogers, DJ; Sandana, EV; Bove, P; Teherani, FH; Nenstiel, C; Hoffmann, A; McClintock, R; Razeghi, M; Look, D; Gentle, A; Phillips, MR; Ton-That, C |
2016-04-01 | Revealing the origin of high-energy Raman local mode in nitrogen doped ZnO nanowires | Khachadorian, S; Gillen, R; Ton-That, C; Zhu, L; Maultzsch, J; Phillips, MR; Hoffmann, A |
2014-01-01 | Shallow carrier traps in hydrothermal ZnO crystals | Ton-That, C; Lem, LLC; Phillips, MR; Reisdorffer, F; Mevellec, J; Nguyen, TP; Nenstiel, C; Hoffmann, A |
2006-10-12 | Structural and electronic properties of Fe3+ and Fe2+ centers in GaN from optical and EPR experiments | Malguth, E; Hoffmann, A; Gehlhoff, W; Gelhausen, O; Phillips, MR; Xu, X |
2008 | Structural and optical inhomogeneities of Fe doped GaN grown by hydride vapor phase epitaxy | Malguth, E; Hoffmann, A; Phillips, M |
2013-01-01 | Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method | Gogova, D; Petrov, PP; Buegler, M; Wagner, MR; Nenstiel, C; Callsen, G; Schmidbauer, M; Kucharski, R; Zajac, M; Dwilinski, R; Phillips, MR; Hoffmann, A; Fornari, R |
2012-09-01 | Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications | Roczen, M; Schade, M; Malguth, E; Callsen, G; Barthel, T; Gref, O; Töfflinger, JA; Schöpke, A; Schmidt, M; Leipner, HS; Ruske, F; Phillips, MR; Hoffmann, A; Korte, L; Rech, B |
2011-10-07 | Titanium-assisted growth of silica nanowires: From surface-matched to free-standing morphologies | Callsen, G; Reparaz, JS; Wagner, MR; Vierck, A; Phillips, MR; Thomsen, C; Hoffmann, A |
2020-04-01 | Towards an assessment framework of reuse: a knowledge-level analysis approach | Beydoun, G; Hoffmann, A; Valencia Garcia, R; Shen, J; Gill, A |
2005-10-24 | Using messaging structure to evolve agents roles in electronic markets | Beydoun, G; Debenham, J; Hoffmann, A |