Browsing byAuthorŁusakowska, E
Showing results 1 to 7 of 7
| Issue Date | Title | Author(s) |
| 2004-01-15 | Atomic layer deposition of thin films of ZnSe - Structural and optical characterization | Guziewicz, E; Godlewski, M; Kopalko, K; Łusakowska, E; Dynowska, E; Guziewicz, M; Godlewski, MM; Phillips, M |
| 2004-01-01 | Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers | Godlewski, M; Łusakowska, E; Bozek, R; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D |
| 2004-02-29 | Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure | Godlewski, M; Łusakowska, E; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Prystawko, P; Leszczynski, M; Grzegory, I; Porowski, S |
| 2005-11-07 | Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures | Godlewski, M; Ivanov, VY; Łusakowska, E; Boźek, R; Masojedovas, S; Juršénas, S; Kazlauskas, K; Žukauskas, A; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D |
| 2004-05-18 | Luminescent properties of wide bandgap materials at room temperature | Godlewski, M; Szmidt, J; Olszyna, A; Werbowy, A; Łusakowska, E; Phillips, MR; Goldys, EM; Sokolowska, A |
| 2004-05-24 | Monocrystalline thin films of ZnSe and ZnO grown by atomic layer epitaxy | Kopalko, K; Godlewski, M; Guziewicz, E; Łusakowska, E; Paszkowicz, W; Domagała, J; Dynowska, E; Szczerbakow, A; Wójcik, A; Phillips, MR |
| 2003-05-01 | Origin of white color light emission in ALE-grown ZnSe | Godlewski, M; Guziewicz, E; Kopalko, K; Łusakowska, E; Dynowska, E; Godlewski, MM; Goldys, EM; Phillips, MR |
