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Showing results 2 to 9 of 9
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Issue Date
Title
Author(s)
2023-05-07
Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on silicon
Pradeepkumar, A
;
Cheng, HH
;
Liu, KY
;
Gebert, M
;
Bhattacharyya, S
;
Fuhrer, MS
;
Iacopi, F
2020-01-24
P-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies
Pradeepkumar, A
;
Amjadipour, M
;
Mishra, N
;
Liu, C
;
Fuhrer, MS
;
Bendavid, A
;
Isa, F
;
Zielinski, M
;
Sirikumara, HI
;
Jayasekara, T
;
Gaskill, DK
;
Iacopi, F
2015-05-13
Profound effect of substrate hydroxylation and hydration on electronic and optical properties of monolayer MoS<inf>2</inf>
Zheng, C
;
Xu, ZQ
;
Zhang, Q
;
Edmonds, MT
;
Watanabe, K
;
Taniguchi, T
;
Bao, Q
;
Fuhrer, MS
2016-11-07
Response to “Comment on ‘Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures’” [Appl. Phys. Lett. 109, 196101 (2016)]
Pradeepkumar, A
;
Mishra, N
;
Kermany, AR
;
Boeckl, JJ
;
Hellerstedt, J
;
Fuhrer, MS
;
Iacopi, F
2017-03-03
Room-Temperature Single-Photon Emission from Oxidized Tungsten Disulfide Multilayers
Tran, TT
;
Choi, S
;
Scott, JA
;
Xu, ZQ
;
Zheng, C
;
Seniutinas, G
;
Bendavid, A
;
Fuhrer, MS
;
Toth, M
;
Aharonovich, I
2017-02-01
Solid source growth of graphene with Ni-Cu catalysts: Towards high quality in situ graphene on silicon
Mishra, N
;
Boeckl, JJ
;
Tadich, A
;
Jones, RT
;
Pigram, PJ
;
Edmonds, M
;
Fuhrer, MS
;
Nichols, BM
;
Iacopi, F
2016-12-20
Strain Relaxation of Monolayer WS<inf>2</inf> on Plastic Substrate
Zhang, Q
;
Chang, Z
;
Xu, G
;
Wang, Z
;
Zhang, Y
;
Xu, ZQ
;
Chen, S
;
Bao, Q
;
Liu, JZ
;
Mai, YW
;
Duan, W
;
Fuhrer, MS
;
Zheng, C
2015-06-23
Synthesis and Transfer of Large-Area Monolayer WS<inf>2</inf> Crystals: Moving Toward the Recyclable Use of Sapphire Substrates
Xu, ZQ
;
Zhang, Y
;
Lin, S
;
Zheng, C
;
Zhong, YL
;
Xia, X
;
Li, Z
;
Sophia, PJ
;
Fuhrer, MS
;
Cheng, YB
;
Bao, Q