Browsing byAuthorFuhrer, MS

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Showing results 2 to 9 of 9< previous 
Issue DateTitleAuthor(s)
2023-05-07Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on siliconPradeepkumar, A; Cheng, HH; Liu, KY; Gebert, M; Bhattacharyya, S; Fuhrer, MS; Iacopi, F
2020-01-24P-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon TechnologiesPradeepkumar, A; Amjadipour, M; Mishra, N; Liu, C; Fuhrer, MS; Bendavid, A; Isa, F; Zielinski, M; Sirikumara, HI; Jayasekara, T; Gaskill, DK; Iacopi, F
2015-05-13Profound effect of substrate hydroxylation and hydration on electronic and optical properties of monolayer MoS<inf>2</inf>Zheng, C; Xu, ZQ; Zhang, Q; Edmonds, MT; Watanabe, K; Taniguchi, T; Bao, Q; Fuhrer, MS
2016-11-07Response to “Comment on ‘Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures’” [Appl. Phys. Lett. 109, 196101 (2016)]Pradeepkumar, A; Mishra, N; Kermany, AR; Boeckl, JJ; Hellerstedt, J; Fuhrer, MS; Iacopi, F
2017-03-03Room-Temperature Single-Photon Emission from Oxidized Tungsten Disulfide MultilayersTran, TT; Choi, S; Scott, JA; Xu, ZQ; Zheng, C; Seniutinas, G; Bendavid, A; Fuhrer, MS; Toth, M; Aharonovich, I
2017-02-01Solid source growth of graphene with Ni-Cu catalysts: Towards high quality in situ graphene on siliconMishra, N; Boeckl, JJ; Tadich, A; Jones, RT; Pigram, PJ; Edmonds, M; Fuhrer, MS; Nichols, BM; Iacopi, F
2016-12-20Strain Relaxation of Monolayer WS<inf>2</inf> on Plastic SubstrateZhang, Q; Chang, Z; Xu, G; Wang, Z; Zhang, Y; Xu, ZQ; Chen, S; Bao, Q; Liu, JZ; Mai, YW; Duan, W; Fuhrer, MS; Zheng, C
2015-06-23Synthesis and Transfer of Large-Area Monolayer WS<inf>2</inf> Crystals: Moving Toward the Recyclable Use of Sapphire SubstratesXu, ZQ; Zhang, Y; Lin, S; Zheng, C; Zhong, YL; Xia, X; Li, Z; Sophia, PJ; Fuhrer, MS; Cheng, YB; Bao, Q