Showing results 8 to 26 of 26
< previous
| Issue Date | Title | Author(s) |
| 2004-02-29 | Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure | Godlewski, M; Łusakowska, E; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Prystawko, P; Leszczynski, M; Grzegory, I; Porowski, S |
| 2005-10-01 | Dynamics of light emission in CdMnS nanoparticles | Godlewski, M; Yatsunenko, S; Drozdowicz-Tomsia, K; Goldys, EM; Phillips, MR; Klar, PJ; Heimbrodt, W |
| 2005-11-01 | Growth and characterization of ZnO nanoparticles | Tomaszewska-Grzeda, A; Lojkowski, W; Godlewski, M; Yatsunenko, S; Drozdowicz-Tomsia, K; Goldys, EM; Phillips, MR |
| 2004-01-01 | In-depth and in-plane profiling of light emission properties of InGaN-based laser diode | Godlewski, M; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S |
| 2005-11-07 | Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures | Godlewski, M; Ivanov, VY; Łusakowska, E; Boźek, R; Masojedovas, S; Juršénas, S; Kazlauskas, K; Žukauskas, A; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D |
| 2005-10-01 | Light emission properties of GaN-based laser diode structures | Godlewski, M; Phillips, MR; Czernecki, R; Targowski, G; Perlin, P; Leszczynski, M; Figge, S |
| 2004-05-18 | Luminescent properties of wide bandgap materials at room temperature | Godlewski, M; Szmidt, J; Olszyna, A; Werbowy, A; Łusakowska, E; Phillips, MR; Goldys, EM; Sokolowska, A |
| 2004-10-20 | Mechanism of intra-shell recombination of transition metal and rare earth ions in nanostructures of II-VI compounds | Godlewski, M; Yatsunenko, S; Khachapuridze, A; Ivanov, VY; Gołacki, Z; Karczewski, G; Bergman, PJ; Klar, PJ; Heimbrodt, W; Phillips, MR |
| 2007-01-01 | Mechanisms of enhancement of light emission in nanostructures of II-VI compounds doped with manganese | Godlewski, M; Yatsunenko, S; Ivanov, VY; Drozdowicz-Tomsia, K; Goldys, EM; Phillips, MR; Klar, PJ; Heimbrodt, W |
| 2004-05-24 | Monocrystalline thin films of ZnSe and ZnO grown by atomic layer epitaxy | Kopalko, K; Godlewski, M; Guziewicz, E; Łusakowska, E; Paszkowicz, W; Domagała, J; Dynowska, E; Szczerbakow, A; Wójcik, A; Phillips, MR |
| 2004-01-01 | Monocrystalline ZnO films grown by atomic layer epitaxy - growth and characterization | Kopalko, K; Godlewski, M; Lusakowska, E; Paszkowicz, W; Domagala, JZ; Szczerbakow, A; Ivanov, VY; Godlewski, MM; Phillips, MR; Munoz, M; Tamargo, M; Furdyna, J; Luo, H |
| 2009-01-01 | Optical properties of manganese doped wide band gap ZnS and ZnO | Godlewski, M; Wójcik-Głodowska, A; Guziewicz, E; Yatsunenko, S; Zakrzewski, A; Dumont, Y; Chikoidze, E; Phillips, MR |
| 2005-01-01 | Origin of ultrafast component of photoluminescence decay in nanostructures doped with transition metal or rare-earth ions | Godlewski, M; Yatsunenko, S; Ivanov, VYU; Khachapuridze, A; Świa̧tek, K; Goldys, EM; Phillips, MR; Klar, PJ; Heimbrodt, W |
| 2003-05-01 | Origin of white color light emission in ALE-grown ZnSe | Godlewski, M; Guziewicz, E; Kopalko, K; Łusakowska, E; Dynowska, E; Godlewski, MM; Goldys, EM; Phillips, MR |
| 2001 | Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum Wells | Goldys, E; Godlewski, M; Toropov, A; Phillips, M; Wetzel C, Shur M, Mishra U, Kishino K |
| 2006-05-01 | Profiling of light emission of GaN-based laser diodes with cathodoluminescence | Godlewski, M; Phillips, MR; Kazlauskas, K; Czernecki, R; Targowski, G; Perlin, P; Leszczyński, M; Figge, S; Hommel, D |
| 2002-01-01 | Relationship between sample morphology and carrier diffusion length in gan thin films | Godlewski, M; Goldys, EM; Phillips, M; Böttcher, T; Flgge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Wisniewski, P; Suski, T; Bockowski, M; Grzegory, I; Porowski, S |
| 2003-01-01 | Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction | Yatsunenko, S; Khachapuridze, A; Ivanov, VY; Godlewski, M; Van Khoi, L; Gołacki, Z; Karczewski, G; Goldys, EM; Phillips, M; Klar, PJ; Heimbrodt, W |
| 2005-01-01 | Thin films of ZnO and ZnMnO by atomic layer epitaxy | Wojcik, A; Kopalko, K; Godlewski, M; Lusakowska, E; Guziewicz, E; Minikayev, R; Paszkowicz, W; Swiatek, K; Klepka, M; Jakiela, R; Kiecana, M; Sawicki, M; Dybko, K; Phillips, MR |
