Browsing byAuthorHoffmann, A

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Issue DateTitleAuthor(s)
2018-01-01The development of a global Midwifery Education Accreditation ProgrammeNove, A; Pairman, S; Bohle, LF; Garg, S; Moyo, NT; Michel-Schuldt, M; Hoffmann, A; Castro, G
2004-03-01Dissociation of H-related defect complexes in Mg-doped GaNGelhausen, O; Phillips, MR; Goldys, EM; Paskova, T; Monemar, B; Strassburg, M; Hoffmann, A
2004-05-31Doping-level-dependent optical properties of GaN:MnGelhausen, O; Malguth, E; Phillips, MR; Goldys, EM; Strassburg, M; Hoffmann, A; Graf, T; Gjukic, M; Stutzmann, M
2013-01-01Dynamic evaluation of the development process of knowledge-based information systemsBeydoun, G; Hoffmann, A
2015-01-01Effects of annealing on optical and structural properties of zinc oxide nanocrystalsKhachadorian, S; Gillen, R; Choi, S; Ton-That, C; Kliem, A; Maultzsch, J; Phillips, MR; Hoffmann, A
2013Effects of Strain on the valence band structure and exciton-polariton energies in ZnOWagner, M; Callsen, G; Reparaz, JS; Kirste, R; Hoffmann, A; Rodina, A; Schleife, A; Bechstedt, F; Phillips, M
2013-12-30Effects of strain on the valence band structure and exciton-polariton energies in ZnOWagner, MR; Callsen, G; Reparaz, JS; Kirste, R; Hoffmann, A; Rodina, AV; Schleife, A; Bechstedt, F; Phillips, MR
2020-06-01Enhancement of the UV emission from gold/ZnO nanorods exhibiting no green luminescenceFiedler, S; Lem, LOLC; Ton-That, C; Hoffmann, A; Phillips, MR
2008-03-01Fe in III-V and II-VI semiconductorsMalguth, E; Hoffmann, A; Phillips, MR
2006-05-16Fe-centers in GaN as candidates for spintronics applicationsMnlguth, E; Hoffmann, A; Phillips, M; Gehlhoff, W
2003-12-01Formation and dissociation of hydrogen-related defect centers in Mg-doped GaNGelhausen, O; Phillips, MR; Goldys, EM; Paskova, T; Monemar, B; Strassburg, M; Hoffmann, A
2004-03-01Identification of bound exciton complexes in ZnOStrassburg, M; Rodina, A; Dworzak, M; Haboeck, U; Krestnikov, IL; Hoffmann, A; Gelhausen, O; Phillips, MR; Alves, HR; Zeuner, A; Hofmann, DM; Meyer, BK
2010-12-01Luminescence of InGaN MQWs grown on misorientated GaN substratesNenstiel, C; Switaisky, T; Alic, M; Suski, T; Albecht, M; Phillips, MR; Hoffmann, A
2002-01Mining Both Positive and Negative Association RulesWu, X; Zhang, C; Zhang, S; Sammut, C; Hoffmann, A
2015-07-06Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealingTon-That, C; Zhu, L; Lockrey, MN; Phillips, MR; Cowie, BCC; Tadich, A; Thomsen, L; Khachadorian, S; Schlichting, S; Jankowski, N; Hoffmann, A
2015-08-11Nature of red luminescence in oxygen treated hydrothermally grown zinc oxide nanorodsAnantachaisilp, S; Smith, SM; Ton-That, C; Pornsuwan, S; Moon, AR; Nenstiel, C; Hoffmann, A; Phillips, MR
2003-12-01Optical properties of Mn-doped GaNGelhausen, O; Malguth, E; Phillips, MR; Goldys, EM; Strassburg, M; Hoffmann, A; Graf, T; Gjukic, M; Stutzmann, M
2011-02-07Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurementsCallsen, G; Reparaz, JS; Wagner, MR; Kirste, R; Nenstiel, C; Hoffmann, A; Phillips, MR
2014-11-07Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurementsCallsen, G; Wagner, MR; Reparaz, JS; Nippert, F; Kure, T; Kalinowski, S; Hoffmann, A; Ford, MJ; Phillips, MR; Dalmau, RF; Schlesser, R; Collazo, R; Sitar, Z
2017-12-01Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interfaceChoi, S; Rogers, DJ; Sandana, EV; Bove, P; Teherani, FH; Nenstiel, C; Hoffmann, A; McClintock, R; Razeghi, M; Look, D; Gentle, A; Phillips, MR; Ton-That, C