Browsing byAuthorIvanov, VY

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 2 to 7 of 7< previous 
Issue DateTitleAuthor(s)
2003-01-01Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emissionGodlewski, M; Ivanov, VY; Goldys, EM; Phillips, M; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S
2005-11-07Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structuresGodlewski, M; Ivanov, VY; Łusakowska, E; Boźek, R; Masojedovas, S; Juršénas, S; Kazlauskas, K; Žukauskas, A; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D
2004-10-20Mechanism of intra-shell recombination of transition metal and rare earth ions in nanostructures of II-VI compoundsGodlewski, M; Yatsunenko, S; Khachapuridze, A; Ivanov, VY; Gołacki, Z; Karczewski, G; Bergman, PJ; Klar, PJ; Heimbrodt, W; Phillips, MR
2007-01-01Mechanisms of enhancement of light emission in nanostructures of II-VI compounds doped with manganeseGodlewski, M; Yatsunenko, S; Ivanov, VY; Drozdowicz-Tomsia, K; Goldys, EM; Phillips, MR; Klar, PJ; Heimbrodt, W
2004-01-01Monocrystalline ZnO films grown by atomic layer epitaxy - growth and characterizationKopalko, K; Godlewski, M; Lusakowska, E; Paszkowicz, W; Domagala, JZ; Szczerbakow, A; Ivanov, VY; Godlewski, MM; Phillips, MR; Munoz, M; Tamargo, M; Furdyna, J; Luo, H
2003-01-01Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reductionYatsunenko, S; Khachapuridze, A; Ivanov, VY; Godlewski, M; Van Khoi, L; Gołacki, Z; Karczewski, G; Goldys, EM; Phillips, M; Klar, PJ; Heimbrodt, W