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Showing results 2 to 7 of 7
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Issue Date
Title
Author(s)
2003-01-01
Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission
Godlewski, M
;
Ivanov, VY
;
Goldys, EM
;
Phillips, M
;
Böttcher, T
;
Figge, S
;
Hommel, D
;
Czernecki, R
;
Prystawko, P
;
Leszczynski, M
;
Perlin, P
;
Grzegory, I
;
Porowski, S
2005-11-07
Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
Godlewski, M
;
Ivanov, VY
;
Łusakowska, E
;
Boźek, R
;
Masojedovas, S
;
Juršénas, S
;
Kazlauskas, K
;
Žukauskas, A
;
Goldys, EM
;
Phillips, MR
;
Böttcher, T
;
Figge, S
;
Hommel, D
2004-10-20
Mechanism of intra-shell recombination of transition metal and rare earth ions in nanostructures of II-VI compounds
Godlewski, M
;
Yatsunenko, S
;
Khachapuridze, A
;
Ivanov, VY
;
Gołacki, Z
;
Karczewski, G
;
Bergman, PJ
;
Klar, PJ
;
Heimbrodt, W
;
Phillips, MR
2007-01-01
Mechanisms of enhancement of light emission in nanostructures of II-VI compounds doped with manganese
Godlewski, M
;
Yatsunenko, S
;
Ivanov, VY
;
Drozdowicz-Tomsia, K
;
Goldys, EM
;
Phillips, MR
;
Klar, PJ
;
Heimbrodt, W
2004-01-01
Monocrystalline ZnO films grown by atomic layer epitaxy - growth and characterization
Kopalko, K
;
Godlewski, M
;
Lusakowska, E
;
Paszkowicz, W
;
Domagala, JZ
;
Szczerbakow, A
;
Ivanov, VY
;
Godlewski, MM
;
Phillips, MR
;
Munoz, M
;
Tamargo, M
;
Furdyna, J
;
Luo, H
2003-01-01
Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction
Yatsunenko, S
;
Khachapuridze, A
;
Ivanov, VY
;
Godlewski, M
;
Van Khoi, L
;
Gołacki, Z
;
Karczewski, G
;
Goldys, EM
;
Phillips, M
;
Klar, PJ
;
Heimbrodt, W