Browsing byAuthorKermany, AR

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Showing results 1 to 9 of 9
Issue DateTitleAuthor(s)
2016-07-04Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperaturesPradeepkumar, A; Mishra, N; Kermany, AR; Boeckl, JJ; Hellerstedt, J; Fuhrer, MS; Iacopi, F
-Engineering the Dissipation of Crystalline Micromechanical ResonatorsRomero, E; Valenzuela, VM; Kermany, AR; Sementilli, L; Iacopi, F; Bowen, WP
2016-01-01Factors affecting the f× Q product of 3C-SiC microstrings: What is the upper limit for sensitivity?Kermany, AR; Bennett, JS; Brawley, GA; Bowen, WP; Iacopi, F
2014-08-15Graphitized silicon carbide microbeams: Wafer-level, self-aligned graphene on silicon wafersCunning, BV; Ahmed, M; Mishra, N; Kermany, AR; Wood, B; Iacopi, F
2017-01-06Mechanical and electromechanical properties of graphene and their potential application in MEMSKhan, ZH; Kermany, AR; Öchsner, A; Iacopi, F
2014-01-01Microresonators with Q -factors over a million from highly stressed epitaxial silicon carbide on siliconKermany, AR; Brawley, G; Mishra, N; Sheridan, E; Bowen, WP; Iacopi, F
2017-04-01Potential of epitaxial silicon carbide microbeam resonators for chemical sensingKermany, AR; Bennett, JS; Valenzuela, VM; Bowen, WP; Iacopi, F
2017-04-04Potential of epitaxial silicon carbide microbeam resonators for chemical sensingKermany, AR; Bennett, JS; Valenzuela, VM; Bowen, WP; Iacopi, F
2016-11-07Response to “Comment on ‘Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures’” [Appl. Phys. Lett. 109, 196101 (2016)]Pradeepkumar, A; Mishra, N; Kermany, AR; Boeckl, JJ; Hellerstedt, J; Fuhrer, MS; Iacopi, F