Browsing by Author Phillips, MR

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Issue DateTitleAuthor(s)
2003Electron irradiationinduced electromigration and diffusion of defects in Mgdoped GaNKlein, HN; Goldys, EM; Phillips, MR; Gelhausen, O
1-Aug-2006Enhanced high speed SE imaging in a VPSEM using a Frisch gridPhillips, MR; Morgan, SW
23-Jun-2010Exploiting zinc oxide re-emission to fabricate periodic arraysCoutts, MJ; Zareie, HM; Cortie, MB; Phillips, MR; Wuhrer, R; McDonagh, AM
17-Aug-2018A facile method for bright, colour-tunable light-emitting diodes based on Ga-doped ZnO nanorodsRahman, MA; Scott, JA; Gentle, A; Phillips, MR; Ton-That, C
1-Mar-2008Fe in III-V and II-VI semiconductorsMalguth, E; Hoffmann, A; Phillips, MR
1-Dec-2003Formation and dissociation of hydrogen-related defect centers in Mg-doped GaNGelhausen, O; Phillips, MR; Goldys, EM; Paskova, T; Monemar, B; Strassburg, M; Hoffmann, A
20-Oct-2006Gaseous scintillation detection and amplification in variable pressure scanning electron microscopyMorgan, SW; Phillips, MR
1-Nov-2005Growth and characterization of ZnO nanoparticlesTomaszewska-Grzeda, A; Lojkowski, W; Godlewski, M; Yatsunenko, S; Drozdowicz-Tomsia, K; Goldys, EM; Phillips, MR
25-Apr-2005Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structuresDrozdowicz-Tomsia, K; Goldys, EM; Motlan, M; Zareie, H; Phillips, MR
7-Mar-2008High bandwidth secondary electron detection in variable pressure scanning electron microscopy using a Frisch gridMorgan, SW; Phillips, MR
1-Mar-2004Identification of bound exciton complexes in ZnOStrassburg, M; Rodina, A; Dworzak, M; Haboeck, U; Krestnikov, IL; Hoffmann, A; Gelhausen, O; Phillips, MR; Alves, HR; Zeuner, A; Hofmann, DM; Meyer, BK
26-Feb-2007Imaging deep trap distributions by low vacuum scanning electron microscopyToth, M; Knowles, WR; Phillips, MR
1-Jul-2009Imaging fundamental electronic excitations at high spatial resolution using scanning cathodoluminescence microscopyPhillips, MR; Drouin, D; Moody, SJ; Ton-That, C
1-Jan-2004In-depth and in-plane profiling of light emission properties of InGaN-based laser diodeGodlewski, M; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S
1-Sep-2006In-situ investigation of discolouration processes between historic oil paint pigmentsWhite, R; Phillips, MR; Thomas, P; Wuhrer, R
21-Jan-2002Indentation-induced damage in GaN epilayersBradby, JE; Kucheyev, SO; Williams, JS; Wong-Leung, J; Swain, MV; Munroe, P; Li, G; Phillips, MR
17-Feb-2017Indirect excitons in hydrogen-doped ZnOZhu, L; Lem, LLC; Nguyen, TP; Fair, K; Ali, S; Ford, MJ; Phillips, MR; Ton-That, C
11-Nov-2002Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaNGelhausen, O; Klein, HN; Phillips, MR; Goldys, EM
7-Nov-2005Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structuresGodlewski, M; Ivanov, VY; Łusakowska, E; Boźek, R; Masojedovas, S; Juršénas, S; Kazlauskas, K; Žukauskas, A; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D
1-Dec-2006Integration of quantum dot devices by selective area epitaxyMokkapati, S; Tan, HH; Jagadish, C; McBean, KE; Phillips, MR