Showing results 70 to 89 of 144
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| Issue Date | Title | Author(s) |
| 1-Mar-2004 | Identification of bound exciton complexes in ZnO | Strassburg, M; Rodina, A; Dworzak, M; Haboeck, U; Krestnikov, IL; Hoffmann, A; Gelhausen, O; Phillips, MR; Alves, HR; Zeuner, A; Hofmann, DM; Meyer, BK |
| 26-Feb-2007 | Imaging deep trap distributions by low vacuum scanning electron microscopy | Toth, M; Knowles, WR; Phillips, MR |
| 1-Jul-2009 | Imaging fundamental electronic excitations at high spatial resolution using scanning cathodoluminescence microscopy | Phillips, MR; Drouin, D; Moody, SJ; Ton-That, C |
| 1-Jan-2004 | In-depth and in-plane profiling of light emission properties of InGaN-based laser diode | Godlewski, M; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S |
| 1-Sep-2006 | In-situ investigation of discolouration processes between historic oil paint pigments | White, R; Phillips, MR; Thomas, P; Wuhrer, R |
| 21-Jan-2002 | Indentation-induced damage in GaN epilayers | Bradby, JE; Kucheyev, SO; Williams, JS; Wong-Leung, J; Swain, MV; Munroe, P; Li, G; Phillips, MR |
| 17-Feb-2017 | Indirect excitons in hydrogen-doped ZnO | Zhu, L; Lem, LLC; Nguyen, TP; Fair, K; Ali, S; Ford, MJ; Phillips, MR; Ton-That, C |
| 11-Nov-2002 | Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN | Gelhausen, O; Klein, HN; Phillips, MR; Goldys, EM |
| 7-Nov-2005 | Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures | Godlewski, M; Ivanov, VY; Łusakowska, E; Boźek, R; Masojedovas, S; Juršénas, S; Kazlauskas, K; Žukauskas, A; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D |
| 1-Dec-2006 | Integration of quantum dot devices by selective area epitaxy | Mokkapati, S; Tan, HH; Jagadish, C; McBean, KE; Phillips, MR |
| 1-Oct-2005 | Light emission properties of GaN-based laser diode structures | Godlewski, M; Phillips, MR; Czernecki, R; Targowski, G; Perlin, P; Leszczynski, M; Figge, S |
| 20-Oct-2003 | Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN | Gelhausen, O; Klein, HN; Phillips, MR; Goldys, EM |
| 1-Dec-2010 | Luminescence of InGaN MQWs grown on misorientated GaN substrates | Nenstiel, C; Switaisky, T; Alic, M; Suski, T; Albecht, M; Phillips, MR; Hoffmann, A |
| 1-Mar-2008 | Luminescence properties of poly- (phenylene vinylene) derivatives | Ton-That, C; Stockton, G; Phillips, MR; Nguyen, TP; Huang, CH; Cojocaru, A |
| 1-Dec-2005 | A luminescence study of porous diatoms | Butcher, KSA; Ferris, JM; Phillips, MR; Wintrebert-Fouquet, M; Jong Wah, JW; Jovanovic, N; Vyverman, W; Chepurnov, VA |
| 18-May-2004 | Luminescent properties of wide bandgap materials at room temperature | Godlewski, M; Szmidt, J; Olszyna, A; Werbowy, A; Łusakowska, E; Phillips, MR; Goldys, EM; Sokolowska, A |
| 15-Oct-2008 | Luminescent properties of ZnO nanowires and as-grown ensembles | Ton-That, C; Foley, M; Phillips, MR |
| 31-May-2010 | Luminescent properties of ZnO structures grown with a vapour transport method | Foley, M; Ton-That, C; Phillips, MR |
| 1-Dec-2010 | A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation | Manning, TJ; Hardy, T; Merklein, M; Wintrebert-Fouquet, M; Phillips, MR |
| 20-Oct-2004 | Mechanism of intra-shell recombination of transition metal and rare earth ions in nanostructures of II-VI compounds | Godlewski, M; Yatsunenko, S; Khachapuridze, A; Ivanov, VY; Gołacki, Z; Karczewski, G; Bergman, PJ; Klar, PJ; Heimbrodt, W; Phillips, MR |
