Browsing by Author Hoffmann, A

0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Showing results 1 to 20 of 33  next >
Issue DateTitleAuthor(s)
11-Jul-2011Bound excitons in ZnO: Structural defect complexes versus shallow impurity centersWagner, MR; Callsen, G; Reparaz, JS; Schulze, JH; Kirste, R; Cobet, M; Ostapenko, IA; Rodt, S; Nenstiel, C; Kaiser, M; Hoffmann, A; Rodina, AV; Phillips, MR; Lautenschläger, S; Eisermann, S; Meyer, BK
20-Mar-2017Charge state switching of Cu acceptors in ZnO nanorodsRahman, MA; Westerhausen, MT; Nenstiel, C; Choi, S; Hoffmann, A; Gentle, A; Phillips, MR; Ton-That, C
1-Oct-2017Chemical, vibrational and optical signatures of nitrogen in ZnO nanowiresZhu, L; Khachadorian, S; Hoffmann, A; Phillips, MR; Ton-That, C
Jun-2017Constructing enhanced default theories incrementallyBeydoun, G; Hoffmann, A; Gill, A
1-Dec-2017Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface (Scientific Reports (2017) 7 (457) DOI: 10.1038/s41598-017-07568-z)Choi, S; Rogers, DJ; Sandana, EV; Bove, P; Teherani, FH; Nenstiel, C; Hoffmann, A; McClintock, R; Razeghi, M; Look, D; Gentle, A; Phillips, MR; Ton-That, C
1-Jan-2018The development of a global Midwifery Education Accreditation ProgrammeNove, A; Pairman, S; Bohle, LF; Garg, S; Moyo, NT; Michel-Schuldt, M; Hoffmann, A; Castro, G
1-Mar-2004Dissociation of H-related defect complexes in Mg-doped GaNGelhausen, O; Phillips, MR; Goldys, EM; Paskova, T; Monemar, B; Strassburg, M; Hoffmann, A
31-May-2004Doping-level-dependent optical properties of GaN:MnGelhausen, O; Malguth, E; Phillips, MR; Goldys, EM; Strassburg, M; Hoffmann, A; Graf, T; Gjukic, M; Stutzmann, M
1-Jan-2013Dynamic evaluation of the development process of knowledge-based information systemsBeydoun, G; Hoffmann, A
1-Jan-2015Effects of annealing on optical and structural properties of zinc oxide nanocrystalsKhachadorian, S; Gillen, R; Choi, S; Ton-That, C; Kliem, A; Maultzsch, J; Phillips, MR; Hoffmann, A
2013Effects of Strain on the valence band structure and exciton-polariton energies in ZnOWagner, M; Callsen, G; Reparaz, JS; Kirste, R; Hoffmann, A; Rodina, A; Schleife, A; Bechstedt, F; Phillips, M
30-Dec-2013Effects of strain on the valence band structure and exciton-polariton energies in ZnOWagner, MR; Callsen, G; Reparaz, JS; Kirste, R; Hoffmann, A; Rodina, AV; Schleife, A; Bechstedt, F; Phillips, MR
1-Mar-2008Fe in III-V and II-VI semiconductorsMalguth, E; Hoffmann, A; Phillips, MR
16-May-2006Fe-centers in GaN as candidates for spintronics applicationsMnlguth, E; Hoffmann, A; Phillips, M; Gehlhoff, W
1-Dec-2003Formation and dissociation of hydrogen-related defect centers in Mg-doped GaNGelhausen, O; Phillips, MR; Goldys, EM; Paskova, T; Monemar, B; Strassburg, M; Hoffmann, A
1-Mar-2004Identification of bound exciton complexes in ZnOStrassburg, M; Rodina, A; Dworzak, M; Haboeck, U; Krestnikov, IL; Hoffmann, A; Gelhausen, O; Phillips, MR; Alves, HR; Zeuner, A; Hofmann, DM; Meyer, BK
1-Dec-2010Luminescence of InGaN MQWs grown on misorientated GaN substratesNenstiel, C; Switaisky, T; Alic, M; Suski, T; Albecht, M; Phillips, MR; Hoffmann, A
Jan-2002Mining Both Positive and Negative Association RulesWu, X; Zhang, C; Zhang, S; Sammut, C; Hoffmann, A
6-Jul-2015Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealingTon-That, C; Zhu, L; Lockrey, MN; Phillips, MR; Cowie, BCC; Tadich, A; Thomsen, L; Khachadorian, S; Schlichting, S; Jankowski, N; Hoffmann, A
11-Aug-2015Nature of red luminescence in oxygen treated hydrothermally grown zinc oxide nanorodsAnantachaisilp, S; Smith, SM; Ton-That, C; Pornsuwan, S; Moon, AR; Nenstiel, C; Hoffmann, A; Phillips, MR