Browsing byAuthorBoeckl, JJ
Showing results 1 to 9 of 9
| Issue Date | Title | Author(s) |
| 2019-01-11 | Electron effective attenuation length in epitaxial graphene on SiC | Amjadipour, M; Macleod, J; Lipton-Duffin, J; Tadich, A; Boeckl, JJ; Iacopi, F; Motta, N |
| 2018-07-26 | A graphene platform on silicon for the Internet of Everything | Mishra, N; Jiao, S; Mondal, A; Khan, Z; Boeckl, JJ; Gaskill, KD; Brock, RE; Dauskardt, RH; Iacopi, F |
| 2018-02-15 | Quasi free-standing epitaxial graphene fabrication on 3C-SiC/Si(111) | Amjadipour, M; Tadich, A; Boeckl, JJ; Lipton-Duffin, J; MacLeod, J; Iacopi, F; Motta, N |
| 2017-02-01 | Solid source growth of graphene with Ni-Cu catalysts: Towards high quality in situ graphene on silicon | Mishra, N; Boeckl, JJ; Tadich, A; Jones, RT; Pigram, PJ; Edmonds, M; Fuhrer, MS; Nichols, BM; Iacopi, F |
| 2017-01-01 | On-silicon supercapacitors with enhanced storage performance | Ahmed, M; Wang, B; Gupta, B; Boeckl, JJ; Mott, N; Iacopi, F |
| 2016-11-07 | Response to “Comment on ‘Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures’” [Appl. Phys. Lett. 109, 196101 (2016)] | Pradeepkumar, A; Mishra, N; Kermany, AR; Boeckl, JJ; Hellerstedt, J; Fuhrer, MS; Iacopi, F |
| 2016-07-04 | Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures | Pradeepkumar, A; Mishra, N; Kermany, AR; Boeckl, JJ; Hellerstedt, J; Fuhrer, MS; Iacopi, F |
| 2016-01-01 | Preface | Iacopi, F; Boeckl, JJ; Jagadish, C |
| 2015-10-08 | A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors | Ahmed, M; Khawaja, M; Notarianni, M; Wang, B; Goding, D; Gupta, B; Boeckl, JJ; Takshi, A; Motta, N; Saddow, SE; Iacopi, F |
