Browsing by Author Hoffmann, A

Showing results 1 to 20 of 20
Issue DateTitleAuthor(s)
1-Dec-2017Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface (Scientific Reports (2017) 7 (457) DOI: 10.1038/s41598-017-07568-z)Choi, S; Rogers, DJ; Sandana, EV; Bove, P; Teherani, FH; Nenstiel, C; Hoffmann, A; McClintock, R; Razeghi, M; Look, D; Gentle, A; Phillips, MR; Ton-That, C
1-Dec-2017Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interfaceTeherani, FH; Nenstiel, C; Hoffmann, A; McClintock, R; Razeghi, M; Look, D; Gentle, A; Phillips, MR; Ton-That, C
1-Oct-2017Chemical, vibrational and optical signatures of nitrogen in ZnO nanowiresZhu, L; Khachadorian, S; Hoffmann, A; Phillips, MR; Ton-That, C
Jun-2017Constructing enhanced default theories incrementallyBeydoun, G; Hoffmann, A; Gill, A
20-Mar-2017Charge state switching of Cu acceptors in ZnO nanorodsRahman, MA; Westerhausen, MT; Nenstiel, C; Choi, S; Hoffmann, A; Gentle, A; Phillips, MR; Ton-That, C
1-Jan-2015Effects of annealing on optical and structural properties of zinc oxide nanocrystalsHoffmann, A
7-Nov-2014Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurementsHoffmann, A; Ford, MJ; Phillips, MR; Dalmau, RF; Schlesser, R; Collazo, R; Sitar, Z
30-Dec-2013Effects of strain on the valence band structure and exciton-polariton energies in ZnOWagner, MR; Callsen, G; Reparaz, JS; Kirste, R; Hoffmann, A; Rodina, AV; Schleife, A; Bechstedt, F; Phillips, MR
1-Jan-2013Dynamic evaluation of the development process of knowledge-based information systemsBeydoun, G; Hoffmann, A
2013Effects of Strain on the valence band structure and exciton-polariton energies in ZnOWagner, M; Callsen, G; Reparaz, JS; Kirste, R; Hoffmann, A; Rodina, A; Schleife, A; Bechstedt, F; Phillips, M
11-Jul-2011Bound excitons in ZnO: Structural defect complexes versus shallow impurity centersRodt, S; Nenstiel, C; Kaiser, M; Hoffmann, A; Rodina, AV; Phillips, MR; Lautenschläger, S; Eisermann, S; Meyer, BK
1-Dec-2010Luminescence of InGaN MQWs grown on misorientated GaN substratesAlbecht, M; Phillips, MR; Hoffmann, A
2008Structural and optical inhomogeneities of Fe doped GaN grown by hydride vapor phase epitaxyMalguth, E; Hoffmann, A; Phillips, M
12-Oct-2006Structural and electronic properties of Fe3+ and Fe2+ centers in GaN from optical and EPR experimentsMalguth, E; Hoffmann, A; Gehlhoff, W; Gelhausen, O; Phillips, MR; Xu, X
31-May-2004Doping-level-dependent optical properties of GaN:MnPhillips, MR; Goldys, EM; Strassburg, M; Hoffmann, A; Graf, T; Gjukic, M; Stutzmann, M
1-Mar-2004Dissociation of H-related defect complexes in Mg-doped GaNGelhausen, O; Phillips, MR; Goldys, EM; Paskova, T; Monemar, B; Strassburg, M; Hoffmann, A
1-Mar-2004Identification of bound exciton complexes in ZnOKrestnikov, IL; Hoffmann, A; Gelhausen, O; Phillips, MR; Alves, HR; Zeuner, A; Hofmann, DM; Meyer, BK
1-Dec-2003Optical properties of Mn-doped GaNHoffmann, A; Graf, T; Gjukic, M; Stutzmann, M
1-Dec-2003Formation and dissociation of hydrogen-related defect centers in Mg-doped GaNHoffmann, A
Jan-2002Mining Both Positive and Negative Association RulesWu, X; Zhang, C; Zhang, S; Sammut, C; Hoffmann, A