Browsing by Author Ivanov, VY

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Showing results 1 to 6 of 6

Issue Date	Title	Author(s)
30-Apr-2007	Mechanisms of enhancement of light emission in nanostructures of II-VI compounds doped with manganese	Godlewski, M; Yatsunenko, S; Ivanov, VY; Drozdowicz-Tomsia, K; Goldys, EM; Phillips, MR; Klar, PJ; Heimbrodt, W
7-Nov-2005	Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures	Godlewski, M; Ivanov, VY; Łusakowska, E; Boźek, R; Masojedovas, S; Juršénas, S; Kazlauskas, K; Žukauskas, A; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D
20-Oct-2004	Mechanism of intra-shell recombination of transition metal and rare earth ions in nanostructures of II-VI compounds	Godlewski, M; Yatsunenko, S; Khachapuridze, A; Ivanov, VY; Gołacki, Z; Karczewski, G; Bergman, PJ; Klar, PJ; Heimbrodt, W; Phillips, MR
1-Jan-2004	Monocrystalline ZnO films grown by atomic layer epitaxy - growth and characterization	Kopalko, K; Godlewski, M; Lusakowska, E; Paszkowicz, W; Domagala, JZ; Szczerbakow, A; Ivanov, VY; Godlewski, MM; Phillips, MR; Munoz, M; Tamargo, M; Furdyna, J; Luo, H
1-Jan-2003	Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission	Godlewski, M; Ivanov, VY; Goldys, EM; Phillips, M; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S
1-Jan-2003	Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction	Yatsunenko, S; Khachapuridze, A; Ivanov, VY; Godlewski, M; Van Khoi, L; Gołacki, Z; Karczewski, G; Goldys, EM; Phillips, M; Klar, PJ; Heimbrodt, W

Showing results 1 to 6 of 6