Browsing byAuthorFigge, S

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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
2004-01-01Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayersGodlewski, M; Łusakowska, E; Bozek, R; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D
2003-01-01Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emissionGodlewski, M; Ivanov, VY; Goldys, EM; Phillips, M; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S
2004-02-29Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructureGodlewski, M; Łusakowska, E; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Prystawko, P; Leszczynski, M; Grzegory, I; Porowski, S
2004-01-01In-depth and in-plane profiling of light emission properties of InGaN-based laser diodeGodlewski, M; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S
2005-11-07Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structuresGodlewski, M; Ivanov, VY; Łusakowska, E; Boźek, R; Masojedovas, S; Juršénas, S; Kazlauskas, K; Žukauskas, A; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D
2005-10-01Light emission properties of GaN-based laser diode structuresGodlewski, M; Phillips, MR; Czernecki, R; Targowski, G; Perlin, P; Leszczynski, M; Figge, S
2006-05-01Profiling of light emission of GaN-based laser diodes with cathodoluminescenceGodlewski, M; Phillips, MR; Kazlauskas, K; Czernecki, R; Targowski, G; Perlin, P; Leszczyński, M; Figge, S; Hommel, D