Browsing byAuthorPradeepkumar, A
Showing results 1 to 9 of 9
Issue Date | Title | Author(s) |
2016-07-04 | Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures | Pradeepkumar, A; Mishra, N; Kermany, AR; Boeckl, JJ; Hellerstedt, J; Fuhrer, MS; Iacopi, F |
2018-01-01 | Electrical challenges of heteroepitaxial 3C-SiC on silicon | Pradeepkumar, A; Gaskill, DK; Iacopi, F |
2018-06-07 | Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon | Pradeepkumar, A; Zielinski, M; Bosi, M; Verzellesi, G; Gaskill, DK; Iacopi, F |
- | Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review | Pradeepkumar, A; Gaskill, DK; Iacopi, F |
2023-05-07 | Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on silicon | Pradeepkumar, A; Cheng, HH; Liu, KY; Gebert, M; Bhattacharyya, S; Fuhrer, MS; Iacopi, F |
- | Noninvasive Sensors for Brain–Machine Interfaces Based on Micropatterned Epitaxial Graphene | Faisal, N; Nguyen, T-T; Torzo, T; Leong, D; Pradeepkumar, A; Lin, C-T; Iacopi, F |
2020-01-24 | P-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies | Pradeepkumar, A; Amjadipour, M; Mishra, N; Liu, C; Fuhrer, MS; Bendavid, A; Isa, F; Zielinski, M; Sirikumara, HI; Jayasekara, T; Gaskill, DK; Iacopi, F |
2016-11-07 | Response to “Comment on ‘Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures’” [Appl. Phys. Lett. 109, 196101 (2016)] | Pradeepkumar, A; Mishra, N; Kermany, AR; Boeckl, JJ; Hellerstedt, J; Fuhrer, MS; Iacopi, F |
2022-03-02 | Review of Graphene for the Generation, Manipulation, and Detection of Electromagnetic Fields from Microwave to Terahertz | Katzmarek, D; Pradeepkumar, A; Ziolkowski, R; Iacopi, F |