Browsing byAuthorWong-Leung, J

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Showing results 1 to 8 of 8
Issue DateTitleAuthor(s)
2018-06-21The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorodsZhao, B; Lockrey, MN; Caroff, P; Wang, N; Li, L; Wong-Leung, J; Tan, HH; Jagadish, C
2014-08-30Effects of high temperature annealing on defects and luminescence properties in H implanted ZnOChan, KS; Ton-That, C; Vines, L; Choi, S; Phillips, MR; Svensson, BG; Jagadish, C; Wong-Leung, J
2002-01-21Indentation-induced damage in GaN epilayersBradby, JE; Kucheyev, SO; Williams, JS; Wong-Leung, J; Swain, MV; Munroe, P; Li, G; Phillips, MR
2014-02-10InP-based radial heterostructures grown on [100] nanowiresFonseka, HA; Caroff, P; Guo, Y; Wang, F; Wong-Leung, J; Tan, HH; Jagadish, C
2019-06-12Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting DiodesYang, I; Li, Z; Wong-Leung, J; Zhu, Y; Gagrani, N; Li, L; Lockrey, MN; Nguyen, H; Lu, Y; Tan, HH; Jagadish, C; Fu, L
2018-01-01Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase EpitaxyYang, I; Zhang, X; Zheng, C; Gao, Q; Li, Z; Li, L; Lockrey, MN; Nguyen, H; Caroff, P; Etheridge, J; Tan, HH; Jagadish, C; Wong-Leung, J; Fu, L
2014-09-10Selective-area epitaxy of pure wurtzite InP nanowires: High quantum efficiency and room-temperature lasingGao, Q; Saxena, D; Wang, F; Fu, L; Mokkapati, S; Guo, Y; Li, L; Wong-Leung, J; Caroff, P; Tan, HH; Jagadish, C
2008-04-21Tuning the bandgap of InAs quantum dots by selective-area MOCVDMokkapati, S; Wong-Leung, J; Tan, HH; Jagadish, C; McBean, KE; Phillips, MR