TY  - JOUR
AB  - © 2016 IOP Publishing Ltd. The widely used photodetector design based on atomically thin transition metal dichalcogenides (TMDs) has a lateral metal-TMD-metal junction with a fairly small, line shape photoresponsive active area at the TMD-electrode interface. Here, we report a highly efficient photodetector with extremely large photoresponsive active area based on a lateral junction of monolayer-bilayer WSe2. Impressively, the separation of the electron-hole pairs (excitons) extends onto the whole 1L-2L WSe2 junction surface. The responsivity of the WSe2 junction photodetector is over 3200 times higher than that of a monolayer WSe2 device and leads to a highest external quantum efficiency of 256% due to the efficient carrier extraction. Unlike the TMDp-n junctions modulated by dual gates or localized doping, which require complex fabrication procedures, our study establishes a simple, controllable, and scalable method to improve the photodetection performance by maximizing the active area for current generation.
AU  - Xu, ZQ
AU  - Zhang, Y
AU  - Wang, Z
AU  - Shen, Y
AU  - Huang, W
AU  - Xia, X
AU  - Yu, W
AU  - Xue, Y
AU  - Sun, L
AU  - Zheng, C
AU  - Lu, Y
AU  - Liao, L
AU  - Bao, Q
DA  - 2016/09/23
DO  - 10.1088/2053-1583/3/4/041001
JO  - 2D Materials
PY  - 2016/09/23
TI  - Atomically thin lateral p-n junction photodetector with large effective detection area
VL  - 3
Y1  - 2016/09/23
Y2  - 2026/06/16
ER  -