TY - JOUR
AB - © 2017 American Chemical Society. Lateral transition-metal dichalcogenide and their heterostructures have attracted substantial attention, but there lacks a simple approach to produce large-scaled optoelectronic devices with graded composition. In particular, the incorporation of substitution and doping into heterostructure formation is rarely reported. Here, we demonstrate growth of a composition graded doped lateral WSe2/WS2 heterostructure by ambient pressure chemical vapor deposition in a single heat cycle. Through Raman and photoluminescence spectroscopy, we demonstrate that the monolayer heterostructure exhibits a clear interface between two domains and a graded composition distribution in each domain. The coexistence of two distinct doping modes, i.e., interstitial and substitutional doping, was verified experimentally. A distinct three-stage growth mechanism consisting of nucleation, epitaxial growth, and substitution was proposed. Electrical transport measurements reveal that this lateral heterostructure has representative characteristics of a photodiodes. The optoelectronic device based on the lateral WSe2/WS2 heterostructure shows improved photodetection performance in terms of a reasonable responsivity and a large photoactive area.
AU - Li, Z
AU - Zheng, J
AU - Zhang, Y
AU - Zheng, C
AU - Woon, WY
AU - Chuang, MC
AU - Tsai, HC
AU - Chen, CH
AU - Davis, A
AU - Xu, ZQ
AU - Lin, J
AU - Zhang, H
AU - Bao, Q
DA - 2017/01/01
DO - 10.1021/acsami.7b08668
EP - 34212
JO - ACS Applied Materials and Interfaces
PY - 2017/01/01
SP - 34204
TI - Synthesis of ultrathin composition graded doped Lateral WSe2/WS2 heterostructures
VL - 9
Y1 - 2017/01/01
Y2 - 2024/03/28
ER -