TY - JOUR AB - © 2017 American Chemical Society. Lateral transition-metal dichalcogenide and their heterostructures have attracted substantial attention, but there lacks a simple approach to produce large-scaled optoelectronic devices with graded composition. In particular, the incorporation of substitution and doping into heterostructure formation is rarely reported. Here, we demonstrate growth of a composition graded doped lateral WSe2/WS2 heterostructure by ambient pressure chemical vapor deposition in a single heat cycle. Through Raman and photoluminescence spectroscopy, we demonstrate that the monolayer heterostructure exhibits a clear interface between two domains and a graded composition distribution in each domain. The coexistence of two distinct doping modes, i.e., interstitial and substitutional doping, was verified experimentally. A distinct three-stage growth mechanism consisting of nucleation, epitaxial growth, and substitution was proposed. Electrical transport measurements reveal that this lateral heterostructure has representative characteristics of a photodiodes. The optoelectronic device based on the lateral WSe2/WS2 heterostructure shows improved photodetection performance in terms of a reasonable responsivity and a large photoactive area. AU - Li, Z AU - Zheng, J AU - Zhang, Y AU - Zheng, C AU - Woon, WY AU - Chuang, MC AU - Tsai, HC AU - Chen, CH AU - Davis, A AU - Xu, ZQ AU - Lin, J AU - Zhang, H AU - Bao, Q DA - 2017/01/01 DO - 10.1021/acsami.7b08668 EP - 34212 JO - ACS Applied Materials and Interfaces PY - 2017/01/01 SP - 34204 TI - Synthesis of ultrathin composition graded doped Lateral WSe2/WS2 heterostructures VL - 9 Y1 - 2017/01/01 Y2 - 2024/03/28 ER -