Experimental up-scaling of thermal conductivity reductions in silicon by vacancy-engineering: From the nano-To the micro-scale
- Publication Type:
- Conference Proceeding
- Materials Today: Proceedings, 2018, 5 (4), pp. 10211 - 10217
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© 2017 Elsevier Ltd. All rights reserved. A method to reduce the thermal conductivity in Si thin-films by at least an order of magnitude is shown, successfully demonstrating the up-scaling of this technique from Si nano-films. High energy self implantation of Si is used to create a supersaturation of lattice vacancy concentrations that remain following post implant rapid thermal annealing producing a disruption in phonon mode thermal transport. This method demonstrates an approach for micro-harvesting thermoelectric device applications without the difficulties faced for dimensional up-scaling in alternative Si thermoelectric approaches. Challenges surrounding the thermal budget required for post implant dopant activation in p-Type Si are also shown.
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