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Issue DateTitleAuthor(s)
2015-01-01A catalytic alloy approach for graphene on epitaxial SiC on silicon wafersIacopi, F; Mishra, N; Cunning, BV; Goding, D; Dimitrijev, S; Brock, R; Dauskardt, RH; Wood, B; Boeckl, J
2017-01-01Growing graphene on semiconductorsMotta, N; Iacopi, F; Coletti, C
2021-01-12A Fully Integrated Conductive and Dielectric Additive Manufacturing Technology for Microwave Circuits and AntennasLi, M; Yang, Y; Zhang, Y; Iacopi, F; Ram, S; Nulman, J
2011-03-07Cryogenic plasmas for controlled processing of nanoporous materialsIacopi, F; Choi, JH; Terashima, K; Rice, PM; Dubois, G
-Towards low- loss on-chip nanophotonics with graphene and silicon carbide: a reviewRufangura, P; Folland, T; Agrawal, A; Caldwell, JD; Iacopi, F
2016-09-01Graphene growth on silicon carbide: A review (Phys. Status Solidi A 9∕2016)Mishra, N; Boeckl, J; Motta, N; Iacopi, F
2014-03-01Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHVGupta, B; Notarianni, M; Mishra, N; Shafiei, M; Iacopi, F; Motta, N
2016-01-01Factors affecting the f× Q product of 3C-SiC microstrings: What is the upper limit for sensitivity?Kermany, AR; Bennett, JS; Brawley, GA; Bowen, WP; Iacopi, F
-Engineering the Dissipation of Crystalline Micromechanical ResonatorsRomero, E; Valenzuela, VM; Kermany, AR; Sementilli, L; Iacopi, F; Bowen, WP
2015-01-01Erratum: Corrigendum to ''Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV'' [Carbon 68 (2014) 563-572]Gupta, B; Notarianni, M; Mishra, N; Shafiei, M; Iacopi, F; Motta, N
Results 1-10 of 68 (Search time: 0.206 seconds).