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Issue DateTitleAuthor(s)
2006-01-01X-ray diffraction analysis on crystallite development of nanostructured aluminiumMeijer, E; Armstrong, N; Yeung, WY; Sung, JH; Lee, CG; You, YZ; Lee, YK; Kim, JY
2004-05-31Doping-level-dependent optical properties of GaN:MnGelhausen, O; Malguth, E; Phillips, MR; Goldys, EM; Strassburg, M; Hoffmann, A; Graf, T; Gjukic, M; Stutzmann, M
2001-06-01Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layerGodlewski, M; Goldys, EM; Phillips, MR; Pakula, K; Baranowski, JM
2015-08-11Nature of red luminescence in oxygen treated hydrothermally grown zinc oxide nanorodsAnantachaisilp, S; Smith, SM; Ton-That, C; Pornsuwan, S; Moon, AR; Nenstiel, C; Hoffmann, A; Phillips, MR
2011-01-01Adhesion of sol-gel derived hydroxyapatite nanocoatings on anodised pure titanium and titanium (Ti6Al4V) alloy substratesRoest, R; Latella, BA; Heness, G; Ben-Nissan, B
2006-10-01Carrier diffusion processes near threading dislocations in GaN and GaN:Si characterized by low voltage cathodoluminescencePauc, N; Phillips, MR; Aimez, V; Drouin, D
2017-04-01New degrees of freedom in nonlinear metamaterialsLapine, M
2001-03-15Depth-resolved cathodoluminescence microanalysis of near-edge emission in III-nitride thin filmsGelhausen, O; Phillips, MR; Toth, M
2003-06-16Dilute LaB<inf>6</inf> nanoparticles in polymer as optimized clear solar control glazingSchelm, S; Smith, GB
2004-02-29Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructureGodlewski, M; Łusakowska, E; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Prystawko, P; Leszczynski, M; Grzegory, I; Porowski, S
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