Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO

Coleman, VA; Bradby, JE; Jagadish, C; Phillips, MR

Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO

Coleman, VA Bradby, JE Jagadish, C Phillips, MR

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Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2006, 89 (8)
Issue Date:: 2006-09-05

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Field	Value	Language
dc.contributor.author	Coleman, VA	en_US
dc.contributor.author	Bradby, JE	en_US
dc.contributor.author	Jagadish, C	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2006-09-05	en_US
dc.identifier.citation	Applied Physics Letters, 2006, 89 (8)	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/436
dc.description.abstract	The influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence (CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and defect emission in the range of 450-720 nm is enhanced. Analysis of CL monochromatic images and spectra suggests that at least two different defect states are responsible for the broad defect emission band. Additionally, the indents result in a strong crystallographic dependence of the defect emission, producing a rosette feature with [112̄0] [21̄1̄0], and [12̄10] orientations that reflect the star-shaped luminescence quenching observed at the excitonic peak (390 nm). © 2006 American Institute of Physics.	en_US
dc.relation	http://purl.org/au-research/grants/arc/LE0560850
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.2338552	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO	en_US
dc.type	Journal Article
utslib.citation.volume	8	en_US
utslib.citation.volume	89	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	020504 Photonics, Optoelectronics and Optical Communications	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	8	en_US
pubs.publication-status	Published	en_US
pubs.volume	89	en_US

Abstract:

The influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence (CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and defect emission in the range of 450-720 nm is enhanced. Analysis of CL monochromatic images and spectra suggests that at least two different defect states are responsible for the broad defect emission band. Additionally, the indents result in a strong crystallographic dependence of the defect emission, producing a rosette feature with [112̄0] [21̄1̄0], and [12̄10] orientations that reflect the star-shaped luminescence quenching observed at the excitonic peak (390 nm). © 2006 American Institute of Physics.

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http://hdl.handle.net/10453/436