Chemical origin of the yellow luminescence in GaN

Kucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C; Li, G

Chemical origin of the yellow luminescence in GaN

Kucheyev, SO Toth, M

Phillips, MR

Williams, JS Jagadish, C Li, G

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Publication Type:: Journal Article
Citation:: Journal of Applied Physics, 2002, 91 (9), pp. 5867 - 5874
Issue Date:: 2002-05-01

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Field	Value	Language
dc.contributor.author	Kucheyev, SO	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Williams, JS	en_US
dc.contributor.author	Jagadish, C	en_US
dc.contributor.author	Li, G	en_US
dc.date.issued	2002-05-01	en_US
dc.identifier.citation	Journal of Applied Physics, 2002, 91 (9), pp. 5867 - 5874	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://hdl.handle.net/10453/776
dc.description.abstract	The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act as nonradiative recombination centers and do not give rise to the yellow luminescence (YL) of GaN. Experimental data unequivocally shows that C is involved in the defect-impurity complex responsible for YL. In addition, C-related complexes appear to act as efficient nonradiative recombination centers. Implantation of H produces a broad luminescent peak which is slightly blueshifted with respect to the C-related YL band in the case of high excitation densities. The position of this H-related YL peak exhibits a blueshift with increasing excitation density. Based on this experimental data and results reported previously, the chemical origin of the YL band is discussed. © 2002 American Institute of Physics.	en_US
dc.relation.ispartof	Journal of Applied Physics	en_US
dc.relation.isbasedon	10.1063/1.1467605	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Chemical origin of the yellow luminescence in GaN	en_US
dc.type	Journal Article
utslib.citation.volume	9	en_US
utslib.citation.volume	91	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	01 Mathematical Sciences	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	closed_access
pubs.issue	9	en_US
pubs.publication-status	Published	en_US
pubs.volume	91	en_US

Abstract:

The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act as nonradiative recombination centers and do not give rise to the yellow luminescence (YL) of GaN. Experimental data unequivocally shows that C is involved in the defect-impurity complex responsible for YL. In addition, C-related complexes appear to act as efficient nonradiative recombination centers. Implantation of H produces a broad luminescent peak which is slightly blueshifted with respect to the C-related YL band in the case of high excitation densities. The position of this H-related YL peak exhibits a blueshift with increasing excitation density. Based on this experimental data and results reported previously, the chemical origin of the YL band is discussed. © 2002 American Institute of Physics.

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http://hdl.handle.net/10453/776