Tuning the bandgap of InAs quantum dots by selective-area MOCVD

Publisher:
IOP Publishing Ltd
Publication Type:
Journal Article
Citation:
Journal Of Physics D-Applied Physics, 2008, 41 (8), pp. 0 - 0
Issue Date:
2008-01
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In-plane bandgap energy control of InAs quantum dots (QDs) grown on GaAs substrates is demonstrated using selective-area epitaxy. Transmission electron microscopy and cathodoluminescence are used for characterization of the selectively grown dots. A sing
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