Non-equilibrium molecular orbital calculations of Si/SiO2 Interfaces

Elsevier Inc
Publication Type:
Journal Article
Thin Solid Films, 2000, 369 (1-2), pp. 285 - 288
Issue Date:
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A non-equilibrium statistical molecular orbital approach has been developed to analyze non-equilibrium configurations in Si/SiO2 heterostructures, improvement of which is essential for realization of superior semiconductor devices. The non-equilibrium statistics is discussed and results obtained in conjunction with molecular orbital calculations are being presented.
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