SEM characterisation of nanodevices and nanomaterials

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dc.contributor.author Drouin, D
dc.contributor.author Pauc, N
dc.contributor.author Phillips, M
dc.contributor.author Poissant, P
dc.contributor.author Delample, V
dc.contributor.author Souifi, A
dc.contributor.editor Jagadish, C
dc.contributor.editor Max Lu, GQ
dc.date.accessioned 2010-05-28T09:58:31Z
dc.date.issued 2006-01
dc.identifier.citation Proceedings of the 2006 International Conference on Nanosacience and Nanotechnology, 2006, pp. 596 - 599
dc.identifier.other E1 en_US
dc.identifier.uri http://hdl.handle.net/10453/10686
dc.description.abstract The scanning electron microsope (SEM) cna be used to study and characterise a wide variety of materials used in nanoelectronic and photonic applications. Several different techniques make use of this versatile tool. These include voltage conrtast in secondary electron imaging, charge colletion for semiconductor samples and cathodoluminescnece. These techniques are important in device nanofabrication process development and nanomaterials characterisation.
dc.publisher IEEE
dc.subject single electron transistor, GaN voltage contrast, cathodoluminescence, charge collection, SEm
dc.subject single electron transistor, GaN voltage contrast, cathodoluminescence, charge collection, SEm
dc.title SEM characterisation of nanodevices and nanomaterials
dc.type Conference Proceeding
dc.parent Proceedings of the 2006 International Conference on Nanosacience and Nanotechnology
dc.journal.number en_US
dc.publocation USA en_US
dc.publocation USA
dc.identifier.startpage 596 en_US
dc.identifier.endpage 599 en_US
dc.cauo.name INT en_US
dc.conference Verified OK en_US
dc.conference International Confrence on Nanoscience and Nanotechnology
dc.for 1007 Nanotechnology
dc.personcode 0000021798 en_US
dc.personcode 0000028546 en_US
dc.personcode 810070 en_US
dc.personcode 0000029713 en_US
dc.personcode 0000029714 en_US
dc.personcode 0000029715 en_US
dc.percentage 100 en_US
dc.classification.name Condensed Matter Physics en_US
dc.classification.type FOR-08 en_US
dc.edition en_US
dc.custom International Confrence on Nanoscience and Nanotechnology en_US
dc.date.activity 20060703 en_US
dc.date.activity 2006-07-03
dc.location.activity Brisbane QLD Australia en_US
dc.location.activity Brisbane QLD Australia
dc.description.keywords single electron transistor, GaN voltage contrast, cathodoluminescence, charge collection, SEm en_US
dc.description.keywords single electron transistor, GaN voltage contrast, cathodoluminescence, charge collection, SEm
pubs.embargo.period Not known
pubs.organisational-group /University of Technology Sydney
pubs.organisational-group /University of Technology Sydney/Faculty of Science
pubs.organisational-group /University of Technology Sydney/Strength - Materials and Technology for Energy Efficiency


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