Nonlinear optical response of Ge nanocrystals in a silica matrix

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Show simple item record Dowd, A Elliman, RG Samoc, M Luther-Davies, B 2012-02-02T04:48:08Z 1999-01-11
dc.identifier.citation Applied Physics Letters, 1999, 74 (2), pp. 239 - 241
dc.identifier.issn 0003-6951
dc.identifier.other C1UNSUBMIT en_US
dc.description.abstract Time-resolved degenerate-four-wave-mixing measurements were used to study the nonlinear optical response (intensity-dependent refractive index) of Ge nanocrystallites embedded in a silica matrix. Nanocrystals were fabricated by ion-implanting silica with 1.0 MeV Ge ions to fluences in the range from 0.6 to 3 × 1017 Ge cm-2, followed by annealing at 1100°C for 60 min. For the highest fluence, this resulted in nanocrystals with a log-normal size distribution, having a geometric mean diameter of 3.0 nm and a dimensionless geometric standard deviation of 0.25. The intensity-dependent refractive index |n2| was measured at a wavelength of 800 nm and found to increase linearly with increasing Ge fluence. For the highest fluence, |n2| was determined to be in the range 2.7-6.9 × 10-13 cm-2 W-1, depending on the duration of the excitation pulse; values were consistently smaller for shorter pulse lengths. Relaxation of the nonlinear response was found to have two characteristic time constants, one <100 fs and the other ∼1 ps. © 1999 American Institute of Physics.
dc.language eng
dc.title Nonlinear optical response of Ge nanocrystals in a silica matrix
dc.type Journal Article
dc.parent Applied Physics Letters
dc.journal.volume 2
dc.journal.volume 74
dc.journal.number 2 en_US
dc.publocation Woodbury en_US
dc.identifier.startpage 239 en_US
dc.identifier.endpage 241 en_US SCI.Physics and Advanced Materials en_US
dc.conference Verified OK en_US
dc.for 0204 Condensed Matter Physics
dc.for 0205 Optical Physics
dc.personcode 030626
dc.percentage 50 en_US Optical Physics en_US
dc.classification.type FOR-08 en_US
dc.edition en_US
dc.custom en_US en_US
dc.location.activity ISI:000077942400027 en_US
dc.location.activity ISI:000077942400027
dc.description.keywords Thin-films; Mechanism; Si; Photoluminescence; Susceptibility; Deposition; Emission en_US
dc.description.keywords Thin-films
dc.description.keywords Mechanism
dc.description.keywords Si
dc.description.keywords Photoluminescence
dc.description.keywords Susceptibility
dc.description.keywords Deposition
dc.description.keywords Emission
pubs.embargo.period Not known
pubs.organisational-group /University of Technology Sydney
pubs.organisational-group /University of Technology Sydney/Faculty of Science
pubs.organisational-group /University of Technology Sydney/Faculty of Science/School of Physics and Advanced Materials
pubs.organisational-group /University of Technology Sydney/Strength - Materials and Technology for Energy Efficiency
utslib.copyright.status Closed Access 2015-04-15 12:17:09.805752+10

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