Optical properties of Mn-doped GaN

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dc.contributor.author Gelhausen, O
dc.contributor.author Malguth, E
dc.contributor.author Phillips, MR
dc.contributor.author Goldys, EM
dc.contributor.author Strassburg, M
dc.contributor.author Hoffmann, A
dc.contributor.author Graf, T
dc.contributor.author Gjukic, M
dc.contributor.author Stutzmann, M
dc.date.accessioned 2009-11-09T02:44:15Z
dc.date.issued 2003
dc.date.issued 2003
dc.identifier.citation Materials Research Society Symposium - Proceedings, 2003, 798 pp. 569 - 574
dc.identifier.citation Materials Research Society Symposium - Proceedings, 2003, 798 pp. 569 - 574
dc.identifier.issn 0272-9172
dc.identifier.other E1 en_US
dc.identifier.uri http://hdl.handle.net/10453/1710
dc.description.abstract Molecular beam epitaxy-grown GaN with different Mn concentrations (5-23×1019 cm-3) and codoped with Si were investigated by cathodoluminescence (CL) spectroscopy and optical transmission measurements. In the GaN:Mn, an intense absorption peak at 1.414 +/- 0.002 eV was observed. This peak was attributed to an internal 5T 2→ 5E transition of the deep neutral Mn3+ state since its intensity scaled with the Mn3+ concentration. The CL measurements showed that Mn-doping concentrations around 1020 cm -3 had three effects on the emission spectrum: (i) the donor bound exciton at 3.460 eV was reduced by more than one order of magnitude, (ii) the donor-acceptor-pair band at 3.27 eV was completely quenched and (iii) the yellow luminescence centered at 2.2 eV was the strongly decreased. The latter two effects were attributed to a reduced concentration of VGa. In the infrared spectral range, three broad, Mn-doping related CL emission bands centered at 1.01 ± 0.02 eV, 1.09 ± 0.02 eV and 1.25 ± 0.03 eV were observed. These bands might be related to deep donor complexes, which are generated as a result of the heavy Mn-doping, rather than internal transitions at the Mn atom.
dc.description.abstract Molecular beam epitaxy-grown GaN with different Mn concentrations (5-23×1019 cm-3) and codoped with Si were investigated by cathodoluminescence (CL) spectroscopy and optical transmission measurements. In the GaN:Mn, an intense absorption peak at 1.414 +/- 0.002 eV was observed. This peak was attributed to an internal 5T 2→ 5E transition of the deep neutral Mn3+ state since its intensity scaled with the Mn3+ concentration. The CL measurements showed that Mn-doping concentrations around 1020 cm -3 had three effects on the emission spectrum: (i) the donor bound exciton at 3.460 eV was reduced by more than one order of magnitude, (ii) the donor-acceptor-pair band at 3.27 eV was completely quenched and (iii) the yellow luminescence centered at 2.2 eV was the strongly decreased. The latter two effects were attributed to a reduced concentration of VGa. In the infrared spectral range, three broad, Mn-doping related CL emission bands centered at 1.01 ± 0.02 eV, 1.09 ± 0.02 eV and 1.25 ± 0.03 eV were observed. These bands might be related to deep donor complexes, which are generated as a result of the heavy Mn-doping, rather than internal transitions at the Mn atom.
dc.title Optical properties of Mn-doped GaN
dc.title Optical properties of Mn-doped GaN
dc.type Conference Proceeding
dc.description.version Published
dc.parent Materials Research Society Symposium - Proceedings
dc.parent Materials Research Society Symposium - Proceedings
dc.journal.volume 798
dc.journal.number en_US
dc.publocation USA en_US
dc.identifier.startpage 569 en_US
dc.identifier.endpage 574 en_US
dc.cauo.name SCI.Faculty of Science en_US
dc.conference Verified OK en_US
dc.conference Symposium on GaN and Related Alloys held at the MRS Fall Meeting
dc.conference.location Boston, USA en_US
dc.for 0912 Materials Engineering
dc.for 0204 Condensed Matter Physics
dc.personcode 810070
dc.percentage 80 en_US
dc.classification.name Condensed Matter Physics en_US
dc.classification.type FOR-08 en_US
dc.custom GaN and Related Alloys en_US
dc.date.activity 20031201 en_US
dc.date.activity 2003-12-01
dc.location.activity Boston, USA en_US
dc.location.activity Boston, MA
pubs.embargo.period Not known
pubs.organisational-group /University of Technology Sydney
pubs.organisational-group /University of Technology Sydney/Faculty of Science
pubs.organisational-group /University of Technology Sydney/Strength - Materials and Technology for Energy Efficiency
utslib.copyright.status Closed Access
utslib.copyright.date 2015-04-15 12:23:47.074767+10
pubs.consider-herdc true
utslib.collection.history General Collection (ID: 346) [2015-05-15T14:12:01+10:00]
utslib.collection.history Uncategorised (ID: 363)
utslib.collection.history General (ID: 2)
utslib.collection.history General (ID: 2)


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