Titanium-assisted growth of silica nanowires: From surface-matched to free-standing morphologies

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dc.contributor.author Callsen, G
dc.contributor.author Reparaz, JS
dc.contributor.author Wagner, MR
dc.contributor.author Vierck, A
dc.contributor.author Phillips, MR
dc.contributor.author Thomsen, C
dc.contributor.author Hoffmann, A
dc.date.accessioned 2012-10-12T03:34:07Z
dc.date.issued 2011-10-07
dc.identifier.citation Nanotechnology, 2011, 22 (40)
dc.identifier.issn 0957-4484
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/18428
dc.description.abstract We report on an oxide-assisted growth technique for silica nanowires which allows tuning the growth from surface-matched nanowires to free-standing morphologies based on growth control by Ti in the role of a catalyst and surfactant. Using an adjustable Ti concentration, we grew silica nanowires with lengths ranging from 100nm up to several millimetres whose defect chemistry was analysed by electron microscopy tools, monochromatic cathodoluminescence imaging and time resolved photoluminescence spectroscopy. The knowledge of the luminescence properties and the related defect occurrence along with their spatial distribution is pivotal for advancing silica nanowire growth in order to realize successful device designs based on self-assembled Si/SiOx nanostructures. We demonstrate a core-shell structure of the grown nanowires with a highly luminescent 150nm thick shell and outstandingly fast decaying dynamics (≈1ns) for glass-like materials. The conjunction of the observed efficient and stable luminescences with their attributed decaying behaviours suggests applications for silica nanowires such as active and passive optical interconnectors and white light phosphors. The identification of a time domain difference for the spectral regime from 2.3 to 3.3eV, within the confined spatial dimensions of a single nanowire, is very promising for future, e.g.data transmission applications, employing silica nanowires which exhibit achievable compatibility with commonly applied silicon-based electronics. A qualitative growth model based on silica particle diffusion and Ti-assisted seed formation is developed for the various types of segregated silica nanowires which extends commonly assumed oxide-assisted growth mechanisms. © IOP Publishing Ltd.
dc.language eng
dc.relation.isbasedon 10.1088/0957-4484/22/40/405604
dc.title Titanium-assisted growth of silica nanowires: From surface-matched to free-standing morphologies
dc.type Journal Article
dc.description.version Published
dc.parent Nanotechnology
dc.journal.volume 40
dc.journal.volume 22
dc.journal.number 40 en_US
dc.publocation Bristol en_US
dc.publocation North Carolina USA
dc.identifier.startpage 1 en_US
dc.identifier.endpage en_US
dc.identifier.endpage 6 en_US
dc.cauo.name SCI.Faculty of Science en_US
dc.conference Verified OK en_US
dc.conference 6th International Conference On Construction In The 21st Century
dc.for 100706 Nanofabrication, Growth and Self Assembly
dc.personcode 810070
dc.personcode 10523052
dc.percentage 100 en_US
dc.classification.name Nanofabrication, Growth and Self Assembly en_US
dc.classification.type FOR-08 en_US
dc.edition en_US
dc.custom en_US
dc.date.activity en_US
dc.date.activity 2011-07-05
dc.location.activity en_US
dc.location.activity Kuala Lumpar, Malaysia
pubs.embargo.period Not known
pubs.organisational-group /University of Technology Sydney
pubs.organisational-group /University of Technology Sydney/Faculty of Science
pubs.organisational-group /University of Technology Sydney/Strength - Materials and Technology for Energy Efficiency
pubs.organisational-group /University of Technology Sydney/Students
utslib.copyright.status Closed Access
utslib.copyright.date 2015-04-15 12:17:09.805752+10
pubs.consider-herdc true
utslib.collection.history School of Physics and Advanced Materials (ID: 343)
utslib.collection.history School of Physics and Advanced Materials (ID: 343)
utslib.collection.history Closed (ID: 3)

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