Relationship between sample morphology and carrier diffusion length in GaN thin films.

DSpace/Manakin Repository

Search OPUS


Advanced Search

Browse

My Account

Show simple item record

dc.contributor.author Godlewski, M
dc.contributor.author Goldys, EM
dc.contributor.author Phillips, M
dc.contributor.author Bottcher, T
dc.contributor.author Figge, S
dc.contributor.author Hommel, D
dc.contributor.author Czernecki, R
dc.contributor.author Prystawko, P
dc.contributor.author Leszczynski, M
dc.contributor.author Perlin, P
dc.contributor.author Wisniewski, P
dc.contributor.author Suski, T
dc.contributor.author Bockowski, M
dc.contributor.author Grzegory, I
dc.contributor.author Porowski, S
dc.date.accessioned 2009-06-26T04:10:26Z
dc.date.issued 2002-01
dc.identifier.citation Acta Physica Polonica A, 2002, 102 (4-5), pp. 627 - 630
dc.identifier.issn 0587-4246
dc.identifier.other C1UNSUBMIT en_US
dc.identifier.uri http://hdl.handle.net/10453/363
dc.description.abstract Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.
dc.publisher Polish Academy of Science
dc.title Relationship between sample morphology and carrier diffusion length in GaN thin films.
dc.type Journal Article
dc.parent Acta Physica Polonica A
dc.journal.volume 4-5
dc.journal.volume 102
dc.journal.number 4-5 en_US
dc.publocation Warsaw, Poland en_US
dc.identifier.startpage 627 en_US
dc.identifier.endpage 630 en_US
dc.cauo.name SCI.Physics and Advanced Materials en_US
dc.conference Verified OK en_US
dc.for 0912 Materials Engineering
dc.for 0204 Condensed Matter Physics
dc.personcode 810070
dc.percentage 80 en_US
dc.classification.name Condensed Matter Physics en_US
dc.classification.type FOR-08 en_US
dc.description.keywords NA
pubs.embargo.period Not known
pubs.organisational-group /University of Technology Sydney
pubs.organisational-group /University of Technology Sydney/Faculty of Science
pubs.organisational-group /University of Technology Sydney/Strength - Materials and Technology for Energy Efficiency
utslib.copyright.status Closed Access
utslib.copyright.date 2015-04-15 12:23:47.074767+10
pubs.consider-herdc false
utslib.collection.history Uncategorised (ID: 363)
utslib.collection.history General Collection (ID: 346) [2015-05-15T14:11:01+10:00]
utslib.collection.history General (ID: 2)
utslib.collection.history Uncategorised (ID: 363)


Files in this item

This item appears in the following Collection(s)

Show simple item record