Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO

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dc.contributor.author Coleman, VA
dc.contributor.author Bradby, JE
dc.contributor.author Jagadish, C
dc.contributor.author Phillips, MR
dc.date.accessioned 2009-06-26T04:10:31Z
dc.date.issued 2006
dc.date.issued 2006
dc.identifier.citation Applied Physics Letters, 2006, 89 (8)
dc.identifier.citation Applied Physics Letters, 2006, 89 (8)
dc.identifier.issn 0003-6951
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/436
dc.description.abstract The influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence (CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and defect emission in the range of 450-720 nm is enhanced. Analysis of CL monochromatic images and spectra suggests that at least two different defect states are responsible for the broad defect emission band. Additionally, the indents result in a strong crystallographic dependence of the defect emission, producing a rosette feature with [112̄0] [21̄1̄0], and [12̄10] orientations that reflect the star-shaped luminescence quenching observed at the excitonic peak (390 nm). © 2006 American Institute of Physics.
dc.description.abstract The influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence (CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and defect emission in the range of 450-720 nm is enhanced. Analysis of CL monochromatic images and spectra suggests that at least two different defect states are responsible for the broad defect emission band. Additionally, the indents result in a strong crystallographic dependence of the defect emission, producing a rosette feature with [112̄0] [21̄1̄0], and [12̄10] orientations that reflect the star-shaped luminescence quenching observed at the excitonic peak (390 nm). © 2006 American Institute of Physics.
dc.language eng
dc.language eng
dc.relation.isbasedon 10.1063/1.2338552
dc.title Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO
dc.type Journal Article
dc.description.version Published
dc.parent Applied Physics Letters
dc.parent Applied Physics Letters
dc.journal.volume 8
dc.journal.volume 89
dc.journal.number 8 en_US
dc.publocation Melville, USA en_US
dc.identifier.startpage 1 en_US
dc.identifier.endpage 3 en_US
dc.cauo.name SCI.Physics and Advanced Materials en_US
dc.conference Verified OK en_US
dc.for 0204 Condensed Matter Physics
dc.for 020504 Photonics, Optoelectronics and Optical Communications
dc.personcode 810070
dc.percentage 50 en_US
dc.classification.name Photonics, Optoelectronics and Optical Communications en_US
dc.classification.type FOR-08 en_US
pubs.embargo.period Not known
pubs.organisational-group /University of Technology Sydney
pubs.organisational-group /University of Technology Sydney/Faculty of Science
pubs.organisational-group /University of Technology Sydney/Strength - Materials and Technology for Energy Efficiency
utslib.copyright.status Closed Access
utslib.copyright.date 2015-04-15 12:17:09.805752+10
pubs.consider-herdc true
utslib.collection.history General Collection (ID: 346) [2015-05-15T14:11:05+10:00]
utslib.collection.history Closed (ID: 3)


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