Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: The Cu/Si interface

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dc.contributor.author Nixon, KL
dc.contributor.author Vos, M
dc.contributor.author Bewles, C
dc.contributor.author Ford, MJ
dc.date.accessioned 2009-06-26T04:10:54Z
dc.date.issued 2006-08
dc.identifier.citation Surface and Interface Analysis, 2006, 38 (8), pp. 1236 - 1241
dc.identifier.issn 0142-2421
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/600
dc.description.abstract The Cu-Si interface was studied by electron momentum spectroscopy. A thick disordered interface is formed if one material is deposited on the other. Electron momentum spectroscopy measures intensity as a function of binding energy and target electron momentum. Momentum resolution is demonstrated to be very helpful in interpreting the data, even for these disordered interfaces. The interface layer has a well-defined electronic structure, different from either Si or Cu, and consistent with silicide formation. Information is obtained about the total bandwidth of the interface compound, effective Brillouin zone size and Fermi radius. No clear differences are observed in the electronic structure of the interface layer for Si deposited on Cu or Cu deposited on Si. Copyright © 2006 John Wiley & Sons, Ltd.
dc.language eng
dc.relation.isbasedon 10.1002/sia.2385
dc.subject Copper suicide, Electron momentum spectroscopy, copper silicide, electron momentum spectroscopy, copper silicide, electron momentum spectroscopy, Applied Physics
dc.subject Copper suicide; Electron momentum spectroscopy; copper silicide; electron momentum spectroscopy; copper silicide; electron momentum spectroscopy; Applied Physics
dc.title Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: The Cu/Si interface
dc.type Journal Article
dc.parent Surface and Interface Analysis
dc.journal.volume 8
dc.journal.volume 38
dc.journal.number 8 en_US
dc.publocation Chichester, UK en_US
dc.identifier.startpage 1236 en_US
dc.identifier.endpage 1241 en_US
dc.cauo.name SCI.Physics and Advanced Materials en_US
dc.conference Verified OK en_US
dc.for 0204 Condensed Matter Physics
dc.personcode 0000020211 en_US
dc.personcode 0000027869 en_US
dc.personcode 0000027870 en_US
dc.personcode 020323 en_US
dc.percentage 100 en_US
dc.classification.name Condensed Matter Physics en_US
dc.classification.type FOR-08 en_US
dc.description.keywords copper silicide; electron momentum spectroscopy en_US
dc.description.keywords Copper suicide
dc.description.keywords Electron momentum spectroscopy
dc.description.keywords Copper suicide
dc.description.keywords Electron momentum spectroscopy
dc.description.keywords Copper suicide
dc.description.keywords Electron momentum spectroscopy
dc.staffid 020323 en_US
pubs.embargo.period Not known
pubs.organisational-group /University of Technology Sydney
pubs.organisational-group /University of Technology Sydney/Faculty of Science
pubs.organisational-group /University of Technology Sydney/Strength - Materials and Technology for Energy Efficiency


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