Magnetic-field-induced enhancement of terahertz emission from III-V semiconductor surfaces

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dc.contributor.author Johnston, MB
dc.contributor.author Corchia, A
dc.contributor.author Dowd, A
dc.contributor.author Linfield, EH
dc.contributor.author Davies, AG
dc.contributor.author McLaughlin, R
dc.contributor.author Arnone, DD
dc.contributor.author Pepper, M
dc.date.accessioned 2010-05-28T09:42:43Z
dc.date.issued 2002-03
dc.identifier.citation Physica E: Low-Dimensional Systems and Nanostructures, 2002, 13 (2-4), pp. 896 - 899
dc.identifier.issn 1386-9477
dc.identifier.other C1UNSUBMIT en_US
dc.identifier.uri http://hdl.handle.net/10453/8359
dc.description.abstract We discuss the origins of the magnetic-field-induced enhancement of terahertz (THz) emission from bulk semiconductor surfaces. The principal effect of the magnetic field is to rotate the THz dipole and hence dramatically increase the THz power radiated through the semiconductor surface. It also significantly affects the ability of the photo-created carriers to screen surface electric fields. The sensitivity of THz emission to the motion of photo-created carriers makes this an ideal probe of hot carrier dynamics both in bulk semiconductors and sophisticated heterostructures. © 2002 Elsevier Science B.V. All rights reserved.
dc.language eng
dc.relation.isbasedon 10.1016/S1386-9477(02)00229-1
dc.title Magnetic-field-induced enhancement of terahertz emission from III-V semiconductor surfaces
dc.type Journal Article
dc.parent Physica E: Low-Dimensional Systems and Nanostructures
dc.journal.volume 2-4
dc.journal.volume 13
dc.journal.number 2-4 en_US
dc.publocation North-Holland en_US
dc.identifier.startpage 896 en_US
dc.identifier.endpage 899 en_US
dc.cauo.name SCI.Physics and Advanced Materials en_US
dc.conference Verified OK en_US
dc.for 0204 Condensed Matter Physics
dc.for 0205 Optical Physics
dc.personcode 030626
dc.percentage 50 en_US
dc.classification.name Optical Physics en_US
dc.classification.type FOR-08 en_US
dc.edition en_US
dc.custom en_US
dc.date.activity en_US
dc.location.activity en_US
dc.description.keywords Femtosecond optics
dc.description.keywords Femtosecond optics
dc.description.keywords Semiconductor surface fields
dc.description.keywords Semiconductor surface fields
dc.description.keywords Terajertz (Thz)/far-infrared emission
dc.description.keywords Terajertz (Thz)/far-infrared emission
pubs.embargo.period Not known
pubs.organisational-group /University of Technology Sydney
pubs.organisational-group /University of Technology Sydney/Faculty of Science
pubs.organisational-group /University of Technology Sydney/Strength - Materials and Technology for Energy Efficiency
pubs.organisational-group /University of Technology Sydney/Strength - Materials and Technology for Energy Efficiency
utslib.copyright.status Closed Access
utslib.copyright.date 2015-04-15 12:17:09.805752+10
utslib.copyright.date 2015-04-15 12:17:09.805752+10
pubs.consider-herdc false
pubs.consider-herdc false
utslib.collection.history Closed (ID: 3)
utslib.collection.history School of Physics and Advanced Materials (ID: 343)


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