Nanocapacitive circuit elements

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dc.contributor.author Zareie, HM
dc.contributor.author Morgan, SW
dc.contributor.author Moghaddam, M
dc.contributor.author Maaroof, AI
dc.contributor.author Cortie, MB
dc.contributor.author Phillips, MR
dc.date.accessioned 2010-05-28T09:47:54Z
dc.date.issued 2008-08
dc.date.issued 2008-08
dc.identifier.citation ACS Nano, 2008, 2 (8), pp. 1615 - 1619
dc.identifier.citation ACS Nano, 2008, 2 (8), pp. 1615 - 1619
dc.identifier.issn 1936-0851
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/9166
dc.description.abstract "Natural" lithography was used to prepare arrays of nanoscale capacitors on silicon. The capacitance was verified by a novel technique based on the interaction of a charged substrate with the electron beam of a scanning electron microscope. The "nanocapacitors" possessed a capacitance of ∼1 × 10-16F and were observed to hold charge for over an hour. Our results indicate that fabricating nanostructures using natural lithography may provide a viable alternative for future nanoelectronic devices. © 2008 American Chemical Society.
dc.description.abstract "Natural" lithography was used to prepare arrays of nanoscale capacitors on silicon. The capacitance was verified by a novel technique based on the interaction of a charged substrate with the electron beam of a scanning electron microscope. The "nanocapacitors" possessed a capacitance of ∼1 × 10-16F and were observed to hold charge for over an hour. Our results indicate that fabricating nanostructures using natural lithography may provide a viable alternative for future nanoelectronic devices. © 2008 American Chemical Society.
dc.language eng
dc.language eng
dc.relation.hasversion Accepted manuscript version en_US
dc.relation.isbasedon 10.1021/nn800053x
dc.title Nanocapacitive circuit elements
dc.type Journal Article
dc.description.version Published
dc.parent ACS Nano
dc.parent ACS Nano
dc.journal.volume 8
dc.journal.volume 2
dc.journal.number 8 en_US
dc.publocation Washington en_US
dc.identifier.startpage 1615 en_US
dc.identifier.endpage 1619 en_US
dc.cauo.name SCI.Faculty Research Institutes en_US
dc.conference Verified OK en_US
dc.for 0912 Materials Engineering
dc.personcode 810070
dc.personcode 020302
dc.personcode 030414
dc.personcode 96088947
dc.personcode 010727
dc.percentage 100 en_US
dc.classification.name Materials Engineering en_US
dc.classification.type FOR-08 en_US
dc.edition en_US
dc.custom en_US
dc.date.activity en_US
dc.location.activity ISI:000258775000014 en_US
dc.description.keywords Nanocapacitor
dc.description.keywords Nanocapacitor
dc.description.keywords Natural lithography
dc.description.keywords Natural lithography
dc.description.keywords Scanning electon microscopy
dc.description.keywords Scanning electon microscopy
dc.description.keywords Scanning probe microscopy
dc.description.keywords Scanning probe microscopy
pubs.embargo.period Not known
pubs.organisational-group /University of Technology Sydney
pubs.organisational-group /University of Technology Sydney/Faculty of Science
pubs.organisational-group /University of Technology Sydney/Strength - Materials and Technology for Energy Efficiency
pubs.organisational-group /University of Technology Sydney/Strength - Materials and Technology for Energy Efficiency
utslib.copyright.status Open Access
utslib.copyright.date 2015-04-15 12:23:47.074767+10
pubs.consider-herdc true
utslib.collection.history General (ID: 2)
utslib.collection.history School of Physics and Advanced Materials (ID: 343)


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