Frequency and percolation dependence of the observed phase transition in nanostructured and doped VO2 thin films

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dc.contributor.author Gentle, AR
dc.contributor.author Smith, GB
dc.contributor.author Maaroof, AI
dc.date.accessioned 2010-05-28T09:49:33Z
dc.date.issued 2009
dc.identifier.citation Journal of Nanophotonics, 2009, 3 (1)
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/9431
dc.description.abstract The response to applied electric fields of vanadium dioxide thin films above and below the phase transition depends on the size of grains if below ~200nm across, and on aluminum doping above a critical concentration. T c drops as doping level increases, but does not depend on grain size. The observed phase transition undergoes a remarkable qualitative shift as the applied field goes from optical to low frequencies. The expected insulator to metal transition is found at optical frequencies, but at low frequencies an insulator-to-insulator transition occurs. Optical switching at both T < Tc and T > Tc is nearly independent of doping level and grain size. In contrast dc properties in both phases are sensitive to both factors. The band gaps from optical and dc data differ, and densities of states change with doping level. Such behaviour can arise if there is a transient phase change. The way doping and grain size can support such a phase is discussed. Only individual nanograins need to switch phases coherently to explain data, not the whole sample. Resistance as a function of composition across the transition was derived using effective medium compositional analysis of optical data in the hysteresis zone. The percolation thresholds are not at the usual T c values. © 2009 Society of Photo-Optical Instrumentation Engineers.
dc.language eng
dc.relation.isbasedon 10.1117/1.3079405
dc.title Frequency and percolation dependence of the observed phase transition in nanostructured and doped VO2 thin films
dc.type Journal Article
dc.description.version Published
dc.parent Journal of Nanophotonics
dc.journal.volume 1
dc.journal.volume 3
dc.journal.number 031505 en_US
dc.publocation United States en_US
dc.identifier.startpage 1 en_US
dc.identifier.endpage 15 en_US
dc.cauo.name SCI.Faculty of Science en_US
dc.conference Verified OK en_US
dc.for 100711 Nanophotonics
dc.personcode 730312
dc.personcode 000307
dc.personcode 010727
dc.percentage 100 en_US
dc.classification.name Nanophotonics en_US
dc.classification.type FOR-08 en_US
dc.edition en_US
dc.custom en_US
dc.date.activity en_US
dc.location.activity ISI:000272328600006 en_US
dc.description.keywords electromagnetic waves
dc.description.keywords electronics
dc.description.keywords optical materials
dc.description.keywords optical properties
dc.description.keywords surface plasmons
pubs.embargo.period Not known
pubs.organisational-group /University of Technology Sydney
pubs.organisational-group /University of Technology Sydney/Faculty of Science
pubs.organisational-group /University of Technology Sydney/Strength - Materials and Technology for Energy Efficiency
utslib.copyright.status Open Access
utslib.copyright.date 2015-04-15 12:23:47.074767+10
pubs.consider-herdc true
utslib.collection.history School of Physics and Advanced Materials (ID: 343)
utslib.collection.history School of Physics and Advanced Materials (ID: 343)
utslib.collection.history General (ID: 2)


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