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Issue DateTitleAuthor(s)
2018-05-01Wideband Millimeter-Wave On-Chip Quadrature Coupler with Improved In-Band Flatness in 0.13-μm SiGe TechnologyHou, ZJ; Yang, Y; Chiu, L; Zhu, X; Xue, Q
2019-08-14Growth of graphitic carbon layers around silicon carbide nanowiresMishra, N; Bosi, M; Rossi, F; Salviati, G; Boeckl, J; Iacopi, F
2012-02-01Sequential subspace optimization method for electromagnetic devices design with orthogonal design techniqueLei, G; Guo, YG; Zhu, JG; Chen, XM; Xu, W; Shao, KR
2006-01-01X-ray diffraction analysis on crystallite development of nanostructured aluminiumMeijer, E; Armstrong, N; Yeung, WY; Sung, JH; Lee, CG; You, YZ; Lee, YK; Kim, JY
2004-05-31Doping-level-dependent optical properties of GaN:MnGelhausen, O; Malguth, E; Phillips, MR; Goldys, EM; Strassburg, M; Hoffmann, A; Graf, T; Gjukic, M; Stutzmann, M
2013-05-22Analysis of inter-turn insulation of high voltage electrical machine by using multi-conductor transmission line modelZhang, J; Xu, W; Gao, C; Wang, S; Qiu, J; Zhu, JG; Guo, Y
2006-01-01Assessment of losses in a brushless doubly-fed reluctance machineScian, I; Dorrell, DG; Holik, PJ
2011-10-01New axial laminated-structure flux-switching permanent magnet machine with 6/7 polesXu, W; Zhu, J; Zhang, Y; Guo, Y; Lei, G
2007-01-01Investigation on end winding inductance in motor stator windingsHsieh, MF; Hsu, YC; Dorrell, DG; Hu, KH
2001-06-01Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layerGodlewski, M; Goldys, EM; Phillips, MR; Pakula, K; Baranowski, JM
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