Response to “Comment on ‘Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures’” [Appl. Phys. Lett. 109, 196101 (2016)]

Pradeepkumar, A Mishra, N Kermany, AR Boeckl, JJ Hellerstedt, J Fuhrer, MS Iacopi, F

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Field	Value	Language
dc.contributor.author	Pradeepkumar, A	en_US
dc.contributor.author	Mishra, N	en_US
dc.contributor.author	Kermany, AR	en_US
dc.contributor.author	Boeckl, JJ	en_US
dc.contributor.author	Hellerstedt, J	en_US
dc.contributor.author	Fuhrer, MS	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.date.available	2020-05-25T19:08:53Z
dc.date.issued	2016-11-07	en_US
dc.identifier.citation	Applied Physics Letters, 2016, 109 (19)	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/106070
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.4967228	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Response to “Comment on ‘Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures’” [Appl. Phys. Lett. 109, 196101 (2016)]	en_US
dc.type	Journal Article
utslib.citation.volume	19	en_US
utslib.citation.volume	109	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	open_access
pubs.issue	19	en_US
pubs.publication-status	Published	en_US
pubs.volume	109	en_US

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