Gas-Mediated Electron Beam Induced Etching - From Fundamental Physics to Device Fabrication

Publisher:
Cambridge University Press (CUP)
Publication Type:
Journal Article
Citation:
Microscopy and Microanalysis, 2014, 20 (S3), pp. 364 - 365
Issue Date:
2014-08
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Gas-mediated electron beam induced etching (EBIE) is a nanoscale, direct-write technique analogous to gas-assisted focused ion beam (FIB) milling. The main advantage of EBIE is the elimination of sputtering and ion implantation during processing as well as greater material selectivity [1]. Here we discuss recent developments that expand the scope of EBIE applications in nanofabrication and defect generation analysis, and show advances in hardware that open the door for new studies in reaction kinetics using a scanning electron microscope (SEM).
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