Room temperature GaAsSb single nanowire infrared photodetectors

Publication Type:
Journal Article
Citation:
Nanotechnology, 2015, 26 (44)
Issue Date:
2015-10-09
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© 2015 IOP Publishing Ltd. Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetection. Here we demonstrate room temperature operation of GaAs 0.56 Sb 0.44 NW infrared photodetectors grown by metal organic vapor phase epitaxy. These GaAs 0.56 Sb 0.44 NWs have uniform axial composition and show p-type conductivity with a peak field-effect mobility of ∼12 cm 2 V -1 s -1 ). Under light illumination, single GaAs 0.56 Sb 0.44 NW photodetectors exhibited typical photoconductor behavior with an increased photocurrent observed with the increase of temperature owing to thermal activation of carrier trap states. A broadband infrared photoresponse with a long wavelength cutoff at ∼1.66 μm was obtained at room temperature. At a low operating bias voltage of 0.15 V a responsivity of 2.37 (1.44) A/W with corresponding detectivity of 1.08×10 9 (6.55×10 8 ) were achieved at the wavelength of 1.3 (1.55) μm, indicating that ternary GaAs 0.56 Sb 0.44 NWs are promising photodetector candidates for small footprint integrated optical telecommunication systems.
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