Selective-area epitaxy of pure wurtzite InP nanowires: High quantum efficiency and room-temperature lasing

Publication Type:
Journal Article
Citation:
Nano Letters, 2014, 14 (9), pp. 5206 - 5211
Issue Date:
2014-09-10
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© 2014 American Chemical Society. We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of μ50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.
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