Electric field modulated half-metallicity of semichlorinated GaN nanosheets

Xiao, MX; Song, HY; Ao, ZM; Xu, TH; Wang, LL

Electric field modulated half-metallicity of semichlorinated GaN nanosheets

Xiao, MX Song, HY Ao, ZM

Xu, TH Wang, LL

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Publication Type:: Journal Article
Citation:: Solid State Communications, 2016, 245 pp. 5 - 10
Issue Date:: 2016-11-01

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Field	Value	Language
dc.contributor.author	Xiao, MX	en_US
dc.contributor.author	Song, HY	en_US
dc.contributor.author	Ao, ZM https://orcid.org/0000-0003-0333-3727	en_US
dc.contributor.author	Xu, TH	en_US
dc.contributor.author	Wang, LL	en_US
dc.date.issued	2016-11-01	en_US
dc.identifier.citation	Solid State Communications, 2016, 245 pp. 5 - 10	en_US
dc.identifier.issn	0038-1098	en_US
dc.identifier.uri	http://hdl.handle.net/10453/118276
dc.description.abstract	© 2016 Elsevier Ltd Through density-functional theory calculations, we investigated the half-metallic properties of semichlorinated gallium nitride (Cl–GaN) nanosheets (NSs) under an electric field F. The results show that the electric field can modulate Cl–GaN NSs efficiently from ferromagnetic metals to half-metals. More interestingly, under a broad range of electric field intensity (−0.10~−1.30 V/Å), Cl–GaN NSs have the excellently half-metallic properties with the band gaps (3.71–0.96 eV) and maximal half-metallic gaps with 0.30 eV in spin-up states and metallic behaviors in spin-down states. Moreover, the total magnetic moment decreases (increases) depending on the negative (positive) F, mainly induced by the unpaired N atoms. Our studies demonstrate that the electronic and magnetic properties of GaN NSs can be delicately tuned by the combined surface modification and electric field, indicating the potential of GaN NSs for developing high-performance spintronic nanodevices.	en_US
dc.relation.ispartof	Solid State Communications	en_US
dc.relation.isbasedon	10.1016/j.ssc.2016.07.006	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Electric field modulated half-metallicity of semichlorinated GaN nanosheets	en_US
dc.type	Journal Article
utslib.citation.volume	245	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	1007 Nanotechnology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US
pubs.volume	245	en_US

Abstract:

© 2016 Elsevier Ltd Through density-functional theory calculations, we investigated the half-metallic properties of semichlorinated gallium nitride (Cl–GaN) nanosheets (NSs) under an electric field F. The results show that the electric field can modulate Cl–GaN NSs efficiently from ferromagnetic metals to half-metals. More interestingly, under a broad range of electric field intensity (−0.10~−1.30 V/Å), Cl–GaN NSs have the excellently half-metallic properties with the band gaps (3.71–0.96 eV) and maximal half-metallic gaps with 0.30 eV in spin-up states and metallic behaviors in spin-down states. Moreover, the total magnetic moment decreases (increases) depending on the negative (positive) F, mainly induced by the unpaired N atoms. Our studies demonstrate that the electronic and magnetic properties of GaN NSs can be delicately tuned by the combined surface modification and electric field, indicating the potential of GaN NSs for developing high-performance spintronic nanodevices.

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http://hdl.handle.net/10453/118276