Microprobing the mechanical effects of varying dielectric porosity in advanced interconnect structures

Hsing, A; Geisler, H; Ryan, V; Cheng, M; MacHani, K; Breuer, D; Lehr, MU; Paul, J; Iacopi, F; Dauskardt, R

Microprobing the mechanical effects of varying dielectric porosity in advanced interconnect structures

Hsing, A Geisler, H Ryan, V Cheng, M MacHani, K Breuer, D Lehr, MU Paul, J Iacopi, F

Dauskardt, R

Permalink

Publication Type:: Conference Proceeding
Citation:: 2012 IEEE International Interconnect Technology Conference, IITC 2012, 2012
Issue Date:: 2012-10-01

Closed Access

	Filename	Description	Size
	di.pdf	Published version	341.71 kB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Hsing, A	en_US
dc.contributor.author	Geisler, H	en_US
dc.contributor.author	Ryan, V	en_US
dc.contributor.author	Cheng, M	en_US
dc.contributor.author	MacHani, K	en_US
dc.contributor.author	Breuer, D	en_US
dc.contributor.author	Lehr, MU	en_US
dc.contributor.author	Paul, J	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.contributor.author	Dauskardt, R	en_US
dc.date.issued	2012-10-01	en_US
dc.identifier.citation	2012 IEEE International Interconnect Technology Conference, IITC 2012, 2012	en_US
dc.identifier.isbn	9781467311380	en_US
dc.identifier.uri	http://hdl.handle.net/10453/120627
dc.description.abstract	Chip-package interaction has become a major concern due to increasingly porous low-K dielectrics. During the packaging process, shear stresses are exerted on fragile interconnect structures. We use a microprobe metrology system to experimentally measure how interconnect stacks with different dielectric porosities behave under various shear loading conditions and a wide range of temperatures. © 2012 IEEE.	en_US
dc.relation.ispartof	2012 IEEE International Interconnect Technology Conference, IITC 2012	en_US
dc.relation.isbasedon	10.1109/IITC.2012.6251666	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.title	Microprobing the mechanical effects of varying dielectric porosity in advanced interconnect structures	en_US
dc.type	Conference Proceeding
utslib.for	0912 Materials Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.publication-status	Published	en_US

Abstract:

Chip-package interaction has become a major concern due to increasingly porous low-K dielectrics. During the packaging process, shear stresses are exerted on fragile interconnect structures. We use a microprobe metrology system to experimentally measure how interconnect stacks with different dielectric porosities behave under various shear loading conditions and a wide range of temperatures. © 2012 IEEE.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/120627