Selective area epitaxial growth of InP nanowire array for solar cell applications

Gao, Q; Fu, L; Wang, F; Guo, Y; Li, ZY; Peng, K; Li, L; Li, Z; Wenas, Y; Mokkapati, S; Tan, HH; Jagadish, C

Selective area epitaxial growth of InP nanowire array for solar cell applications

Gao, Q Fu, L Wang, F

Guo, Y Li, ZY Peng, K Li, L Li, Z Wenas, Y Mokkapati, S Tan, HH Jagadish, C

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Publication Type:: Conference Proceeding
Citation:: 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, 2014, pp. 252 - 253
Issue Date:: 2014-02-10

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Field	Value	Language
dc.contributor.author	Gao, Q	en_US
dc.contributor.author	Fu, L	en_US
dc.contributor.author	Wang, F https://orcid.org/0000-0001-7403-3305	en_US
dc.contributor.author	Guo, Y	en_US
dc.contributor.author	Li, ZY	en_US
dc.contributor.author	Peng, K	en_US
dc.contributor.author	Li, L	en_US
dc.contributor.author	Li, Z	en_US
dc.contributor.author	Wenas, Y	en_US
dc.contributor.author	Mokkapati, S	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.date.issued	2014-02-10	en_US
dc.identifier.citation	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, 2014, pp. 252 - 253	en_US
dc.identifier.isbn	9781479968671	en_US
dc.identifier.uri	http://hdl.handle.net/10453/121216
dc.description.abstract	© 2014 IEEE. InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.	en_US
dc.relation.ispartof	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014	en_US
dc.relation.isbasedon	10.1109/COMMAD.2014.7038704	en_US
dc.title	Selective area epitaxial growth of InP nanowire array for solar cell applications	en_US
dc.type	Conference Proceeding
utslib.for	0205 Optical Physics	en_US
utslib.for	1007 Nanotechnology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US

Abstract:

© 2014 IEEE. InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.

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http://hdl.handle.net/10453/121216