Formation of intermediate band in ZnTe: O highly mismatched alloy synthesized by ion implantation

Ye, JD; Zhen, K; Gu, SL; Wang, F; Tan, HH; Jagadish, C

Formation of intermediate band in ZnTe: O highly mismatched alloy synthesized by ion implantation

Ye, JD Zhen, K Gu, SL Wang, F

Tan, HH Jagadish, C

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Publication Type:: Conference Proceeding
Citation:: 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, 2014, pp. 259 - 261
Issue Date:: 2014-02-10

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Field	Value	Language
dc.contributor.author	Ye, JD	en_US
dc.contributor.author	Zhen, K	en_US
dc.contributor.author	Gu, SL	en_US
dc.contributor.author	Wang, F https://orcid.org/0000-0001-7403-3305	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.date.issued	2014-02-10	en_US
dc.identifier.citation	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, 2014, pp. 259 - 261	en_US
dc.identifier.isbn	9781479968671	en_US
dc.identifier.uri	http://hdl.handle.net/10453/121224
dc.description.abstract	© 2014 IEEE. ZnTe:O highly mismatched alloys have been produced by isoelectric oxygen implantation into ZnTe and the micro structural and optical properties of ZnTe:O materials have been investigated in detail. The proper dose of oxygen ions led to the formation of intermediate band located at the energy level of ∼0.45eV below the conduction band while high dose of oxygen ions caused an amorphous ZnTe surface layer and enhanced the deep level emission around 1.6eV. The results suggest that the reduction of lattice disorder is needed to convert localized states of intermediate band into extended states, which is crucial to realize high efficiency ZnTe:O based intermediate band solar cells.	en_US
dc.relation.ispartof	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014	en_US
dc.relation.isbasedon	10.1109/COMMAD.2014.7038706	en_US
dc.title	Formation of intermediate band in ZnTe: O highly mismatched alloy synthesized by ion implantation	en_US
dc.type	Conference Proceeding
utslib.for	0205 Optical Physics	en_US
utslib.for	1007 Nanotechnology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US

Abstract:

© 2014 IEEE. ZnTe:O highly mismatched alloys have been produced by isoelectric oxygen implantation into ZnTe and the micro structural and optical properties of ZnTe:O materials have been investigated in detail. The proper dose of oxygen ions led to the formation of intermediate band located at the energy level of ∼0.45eV below the conduction band while high dose of oxygen ions caused an amorphous ZnTe surface layer and enhanced the deep level emission around 1.6eV. The results suggest that the reduction of lattice disorder is needed to convert localized states of intermediate band into extended states, which is crucial to realize high efficiency ZnTe:O based intermediate band solar cells.

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http://hdl.handle.net/10453/121224