Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): Reducing milling damage

Publication Type:
Journal Article
Citation:
Nanotechnology, 2017, 28 (34)
Issue Date:
2017-07-24
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© 2017 IOP Publishing Ltd. Epitaxial growth of graphene on SiC is a scalable procedure that does not require any further transfer step, making this an ideal platform for graphene nanostructure fabrication. Focused ion beam (FIB) is a very promising tool for exploring the reduction of the lateral dimension of graphene on SiC to the nanometre scale. However, exposure of graphene to the Ga+beam causes significant surface damage through amorphisation and contamination, preventing epitaxial graphene growth. In this paper we demonstrate that combining a protective silicon layer with FIB patterning implemented prior to graphene growth can significantly reduce the damage associated with FIB milling. Using this approach, we successfully achieved graphene growth over 3C-SiC/Si FIB patterned nanostructures.
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