Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing
- Publication Type:
- Journal Article
- Nanotechnology, 2016, 27 (18)
- Issue Date:
|Gupta et al Manuscript_revised.docx||Accepted Manuscript Version||5.75 MB|
Copyright Clearance Process
- Recently Added
- In Progress
- Open Access
This item is new to OPUS and is not currently available.
© 2016 IOP Publishing Ltd. We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C-SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.
Please use this identifier to cite or link to this item: