Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing

Gupta, B; Di Bernardo, I; Mondelli, P; Della Pia, A; Betti, MG; Iacopi, F; Mariani, C; Motta, N

Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing

Gupta, B Di Bernardo, I Mondelli, P Della Pia, A Betti, MG Iacopi, F

Mariani, C Motta, N

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Publication Type:: Journal Article
Citation:: Nanotechnology, 2016, 27 (18)
Issue Date:: 2016-03-21

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Field	Value	Language
dc.contributor.author	Gupta, B	en_US
dc.contributor.author	Di Bernardo, I	en_US
dc.contributor.author	Mondelli, P	en_US
dc.contributor.author	Della Pia, A	en_US
dc.contributor.author	Betti, MG	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.contributor.author	Mariani, C	en_US
dc.contributor.author	Motta, N	en_US
dc.date.issued	2016-03-21	en_US
dc.identifier.citation	Nanotechnology, 2016, 27 (18)	en_US
dc.identifier.issn	0957-4484	en_US
dc.identifier.uri	http://hdl.handle.net/10453/139257
dc.description.abstract	© 2016 IOP Publishing Ltd. We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C-SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.	en_US
dc.relation.ispartof	Nanotechnology	en_US
dc.relation.isbasedon	10.1088/0957-4484/27/18/185601	en_US
dc.rights	'This is an author-created, un-copyedited version of an article accepted for publication in [Nanotechnology, 2016, 27 (18)]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher-authenticated version is available online at [https://iopscience.iop.org/article/10.1088/0957-4484/27/18/185601].'
dc.rights	info:eu-repo/semantics/restrictedAccess
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing	en_US
dc.type	Journal Article
utslib.citation.volume	18	en_US
utslib.citation.volume	27	en_US
utslib.for	0912 Materials Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	recently_added	*
pubs.issue	18	en_US
pubs.publication-status	Published	en_US
pubs.volume	27	en_US

Abstract:

© 2016 IOP Publishing Ltd. We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C-SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/139257