Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing

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Journal Article
Nanotechnology, 2016, 27 (18)
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Gupta et al Manuscript_revised.docxAccepted Manuscript Version5.75 MB
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© 2016 IOP Publishing Ltd. We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C-SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.
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