Dislocation loops as a mechanism for thermoelectric power factor enhancement in silicon nano-layers

Publisher:
AMER INST PHYSICS
Publication Type:
Journal Article
Citation:
Applied Physics Letters, 2016, 109, (17)
Issue Date:
2016-10-24
Filename Description Size
WRAP_1.4966686.pdfPublished version1.9 MB
Adobe PDF
Full metadata record
A more than 70% enhancement in the thermoelectric power factor of single-crystal silicon is demonstrated in silicon nano-films, a consequence of the introduction of networks of dislocation loops and extended crystallographic defects. Despite these defects causing reductions in electrical conductivity, carrier concentration, and carrier mobility, large corresponding increases in the Seebeck coefficient and reductions in thermal conductivity lead to a significant net enhancement in thermoelectric performance. Crystal damage is deliberately introduced in a sub-surface nano-layer within a silicon substrate, demonstrating the possibility to tune the thermoelectric properties at the nano-scale within such wafers in a repeatable, large-scale, and cost-effective way.
Please use this identifier to cite or link to this item: