Dislocation loops as a mechanism for thermoelectric power factor enhancement in silicon nano-layers

Bennett, NS; Byrne, D; Cowley, A; Neophytou, N

Dislocation loops as a mechanism for thermoelectric power factor enhancement in silicon nano-layers

Bennett, NS Byrne, D Cowley, A Neophytou, N

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Publisher:: AMER INST PHYSICS
Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2016, 109, (17)
Issue Date:: 2016-10-24

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Field	Value	Language
dc.contributor.author	Bennett, NS
dc.contributor.author	Byrne, D
dc.contributor.author	Cowley, A
dc.contributor.author	Neophytou, N
dc.date.accessioned	2022-08-01T00:20:27Z
dc.date.available	2022-08-01T00:20:27Z
dc.date.issued	2016-10-24
dc.identifier.citation	Applied Physics Letters, 2016, 109, (17)
dc.identifier.issn	0003-6951
dc.identifier.issn	1077-3118
dc.identifier.uri	http://hdl.handle.net/10453/159421
dc.description.abstract	A more than 70% enhancement in the thermoelectric power factor of single-crystal silicon is demonstrated in silicon nano-films, a consequence of the introduction of networks of dislocation loops and extended crystallographic defects. Despite these defects causing reductions in electrical conductivity, carrier concentration, and carrier mobility, large corresponding increases in the Seebeck coefficient and reductions in thermal conductivity lead to a significant net enhancement in thermoelectric performance. Crystal damage is deliberately introduced in a sub-surface nano-layer within a silicon substrate, demonstrating the possibility to tune the thermoelectric properties at the nano-scale within such wafers in a repeatable, large-scale, and cost-effective way.
dc.language	English
dc.publisher	AMER INST PHYSICS
dc.relation.ispartof	Applied Physics Letters
dc.relation.isbasedon	10.1063/1.4966686
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	02 Physical Sciences, 09 Engineering, 10 Technology
dc.subject.classification	Applied Physics
dc.title	Dislocation loops as a mechanism for thermoelectric power factor enhancement in silicon nano-layers
dc.type	Journal Article
utslib.citation.volume	109
utslib.for	02 Physical Sciences
utslib.for	09 Engineering
utslib.for	10 Technology
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Mechanical and Mechatronic Engineering
utslib.copyright.status	closed_access	*
dc.date.updated	2022-08-01T00:20:25Z
pubs.issue	17
pubs.publication-status	Published
pubs.volume	109
utslib.citation.issue	17

Abstract:

A more than 70% enhancement in the thermoelectric power factor of single-crystal silicon is demonstrated in silicon nano-films, a consequence of the introduction of networks of dislocation loops and extended crystallographic defects. Despite these defects causing reductions in electrical conductivity, carrier concentration, and carrier mobility, large corresponding increases in the Seebeck coefficient and reductions in thermal conductivity lead to a significant net enhancement in thermoelectric performance. Crystal damage is deliberately introduced in a sub-surface nano-layer within a silicon substrate, demonstrating the possibility to tune the thermoelectric properties at the nano-scale within such wafers in a repeatable, large-scale, and cost-effective way.

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http://hdl.handle.net/10453/159421