Nitrogen incorporation in ZnO nanowires using N2O dopant gas

Elsevier Inc
Publication Type:
Journal Article
Materials Letters, 2013, 99 (1), pp. 42 - 45
Issue Date:
Full metadata record
Files in This Item:
Filename Description Size
Thumbnail2012002614OK.pdf434.02 kB
Adobe PDF
Aligned nitrogen-doped ZnO nanowires were grown by chemical vapour deposition using Au catalyst. N incorporation was achieved through the introduction of N2O gas as a dopant source and con?rmed by Raman spectroscopy, which reveals additional N-related modes at 275, 580 and 642 cm1 . The nanowires have a hexagonal faceted shape and are predominantly grown along the [001] direction. The nanowire morphology is unaffected by N incorporation. The luminescence peak at 3.24 eV was monitored as a function of N2O content. Intensity analysis of this band reveals that it can be partly attributed to donoracceptor pair (DAP) emission originating from the N doping
Please use this identifier to cite or link to this item: