Electron Flux Controlled Switching Between Electron Beam Induced Etching And Deposition

Toth, M; Lobo, C; Hartigan, G; Knowles, W

Electron Flux Controlled Switching Between Electron Beam Induced Etching And Deposition

Toth, M Lobo, C Hartigan, G Knowles, W

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Publisher:: Amer Inst Physics
Publication Type:: Journal Article
Citation:: Toth Milos et al. 2007, 'Electron Flux Controlled Switching Between Electron Beam Induced Etching And Deposition', Amer Inst Physics, vol. 101, no. 5, pp. 054309-1-054309-6.
Issue Date:: 2007

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Full metadata record

Field	Value	Language
dc.contributor.author	Toth, M	en_US
dc.contributor.author	Lobo, C	en_US
dc.contributor.author	Hartigan, G	en_US
dc.contributor.author	Knowles, W	en_US
dc.date.accessioned	2009-11-12T04:40:55Z
dc.date.available	2009-11-12T04:40:55Z
dc.date.issued	2007	en_US
dc.identifier	2006015351	en_US
dc.identifier.citation	Toth Milos et al. 2007, 'Electron Flux Controlled Switching Between Electron Beam Induced Etching And Deposition', Amer Inst Physics, vol. 101, no. 5, pp. 054309-1-054309-6.	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.other	C1	en_US
dc.identifier.uri	http://hdl.handle.net/10453/3204
dc.description.abstract	Electron beam induced deposition (EBID) and etching (EBIE) are promising methods for the fabrication of three-dimensional nanodevices, wiring of nanostructures, and repair of photolithographic masks. Here, we study simultaneous EBID and EBIE, and demonst	en_US
dc.publisher	Amer Inst Physics	en_US
dc.relation.ispartof	Verified OK	en_US
dc.relation.ispartof	Journal Of Applied Physics	en_US
dc.relation.isbasedon	http://dx.doi.org/10.1063/1.2437667	en_US
dc.subject	Photomask Dimensional Metrology; Induced Tungsten Deposition; Solid Targets; Nanostructures; Lithography; Vapor; Films; Bombardment; Temperature; Fabrication	en_US
dc.subject.classification	Condensed Matter Physics	en_US
dc.title	Electron Flux Controlled Switching Between Electron Beam Induced Etching And Deposition	en_US
dc.type	Journal article
utslib.citation.volume	101	en_US
utslib.citation.number	5	en_US
utslib.location	Melville, USA	en_US
utslib.citation.startpage	054309-1	en_US
utslib.citation.endpage	054309-6	en_US
utslib.identifier.org	SCI.Physics and Advanced Materials	en_US
utslib.for	020400	en_US
utslib.percentage	100	en_US
dc.location.activity	ISI:000244945400129	en_US
utslib.copyright.status	open_access

Abstract:

Electron beam induced deposition (EBID) and etching (EBIE) are promising methods for the fabrication of three-dimensional nanodevices, wiring of nanostructures, and repair of photolithographic masks. Here, we study simultaneous EBID and EBIE, and demonst

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/3204