Imaging deep trap distributions by low vacuum scanning electron microscopy

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Journal Article
Applied Physics Letters, 2007, 90 (7)
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The distribution of deep traps in a bulk dielectric (Al2 O3) is imaged by low vacuum scanning electron microscopy (LVSEM). The image contrast corresponds to spatial variations in radiation-induced, field-enhanced conductivity. A methodology is presented for identification of such contrast, the behavior of which is explained by a model of charge generation and transport in dielectrics imaged by LVSEM. The technique presented is applicable to studies of charge traps in dielectrics, device failure modes, and contrast mechanisms in electron microscopy. © 2007 American Institute of Physics.
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