Imaging deep trap distributions by low vacuum scanning electron microscopy

Toth, M; Knowles, WR; Phillips, MR

Imaging deep trap distributions by low vacuum scanning electron microscopy

Toth, M

Knowles, WR Phillips, MR

Permalink

Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2007, 90 (7)
Issue Date:: 2007-02-26

Closed Access

	Filename	Description	Size
	2006015321.pdf		280.22 kB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.contributor.author	Knowles, WR	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.date.issued	2007-02-26	en_US
dc.identifier.citation	Applied Physics Letters, 2007, 90 (7)	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/3206
dc.description.abstract	The distribution of deep traps in a bulk dielectric (Al2 O3) is imaged by low vacuum scanning electron microscopy (LVSEM). The image contrast corresponds to spatial variations in radiation-induced, field-enhanced conductivity. A methodology is presented for identification of such contrast, the behavior of which is explained by a model of charge generation and transport in dielectrics imaged by LVSEM. The technique presented is applicable to studies of charge traps in dielectrics, device failure modes, and contrast mechanisms in electron microscopy. © 2007 American Institute of Physics.	en_US
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.2644159	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Imaging deep trap distributions by low vacuum scanning electron microscopy	en_US
dc.type	Journal Article
utslib.citation.volume	7	en_US
utslib.citation.volume	90	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
dc.location.activity	ISI:000244249800052	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	closed_access
pubs.issue	7	en_US
pubs.publication-status	Published	en_US
pubs.volume	90	en_US

Abstract:

The distribution of deep traps in a bulk dielectric (Al2 O3) is imaged by low vacuum scanning electron microscopy (LVSEM). The image contrast corresponds to spatial variations in radiation-induced, field-enhanced conductivity. A methodology is presented for identification of such contrast, the behavior of which is explained by a model of charge generation and transport in dielectrics imaged by LVSEM. The technique presented is applicable to studies of charge traps in dielectrics, device failure modes, and contrast mechanisms in electron microscopy. © 2007 American Institute of Physics.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/3206